BOCA BC557C, BC558C, BC558B, BC558A, BC558 Datasheet
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PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC 556, A, B
g
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
BC 557, 8, A, B, C
TO-92
EBC
APPLICATION
PNP General Purpose Transistors, Especially Suited For Use in Driver Stages of Audio
Amplifier, Low Noise Input Stages of Tape Recorders, HI-FI Amplifiers, Signal Processin
Circuits of Television Receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified)
DESCRIPTION SYMBOL BC556
Collector -Emitter Voltage
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Peak
Base Current -Peak
Emitter Current- Peak
Power Dissipation@ Ta=25 degC
Derate Above 25 deg C
Storage Temperature
Junction Temperature
VCEO 65
VCES 80
VCBO 80
VEBO 5.0 V
IC 100 mA
ICM 200 mA
IBM 200 mA
IEM 200 mA
PTA 500 mW
Tstg -65 to +150 deg C
Tj 150 deg C
BC557
45
50
50
4.0 mW/deg C
BC558 UNITS
30 V
30 V
30 V
THERMAL RESISTANCE
Junction to Ambient
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION BC556 BC557 BC558 UNITS
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
Collector-Cut off Current
Rth(j-a) 250 deg C/W
VCEO IC=2mA,IB=0 >65 >45 >30 V
VCBO IC=100uA.IE=0 >80 >50 >30 V
VEBO IE=100uA, IC=0 ALL V
ICBO VCB=30V, IE=0 ALL nA
Tj=150 deg C
VCB=30V, IE=0 ALL uA
ICES VCE=80V, VBE=0 <15 - - nA
VCE=50V, VBE=0 - <15 - nA
VCE=30V, VBE=0 - - <15 nA
TJ=125 deg C
ICES VCE=80V, VBE=0 <4.0 - - uA
VCE=50V, VBE=0 - uA
VCE=30V, VBE=0 - - <4.0 uA
>5.0
<15
<5.0
<4.0
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) BC556-558
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
DESCRIPTION SYMBOL TEST CONDITION VALUE UNITS
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter on Voltage
DYNAMIC CHARACTERISTICS
Transistors Frequency
Collector out-put Capacitance
Emitter Input Capacitance
Noise Figure
hFE IC=10uA,VCE=5V
IC=2mA,VCE=5V
IC=100mA,VCE=5V
VCE(Sat) IC=10mA,IB=0.5mA <0.30 V
IC=100mA,IB=5mA <0.65 V
VBE(Sat) IC=10mA,IB=0.5mA typ0.70 V
IC=100mA,IB=5mA typ0.90 V
VBE(on) IC=2mA,VCE=5V 0.55-0.70 V
IC=10mA,VCE=5V <0.82 V
ft IC=10mA, VCE=5V typ150 MHz
f=100MHz
Ccbo VCB=10V, f=1MHz <6.0 pF
Cib VEB=0.5V, f=1MHz typ9.0 pF
NF IC=0.2mA, VCE=5V <10 dB
Rs=2kohm, f=1kHZ
B=200Hz
A
B
C
BC556
BC557,8
A
B
C
A
B
C
typ90
typ150
typ270
75-475
75-800
110-220
200-450
420-800
typ120
typ200
typ400
Small Signal Current Gain
Input Impedance
Voltage Feedback Ratio
Out put Adimttance
ALL f=1KHz
hfe IC=2mA, VCE=5V
hie IC=2mA, VCE=5V
hre IC=2mA, VCE=5V
hoe IC=2mA, VCE=5V
A
B
C
A
B
C
A
B
C
A
B
C
typ220
typ330
typ600
1.6-4.5 khoms
3.2-8.5
6.0-15
typ1.5 X`10-4
typ2.0
typ3.0
<30 umhos
<60
<110
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