BOCA 2N6716, 2N6715, 2N6714 Datasheet

Q

Q

TO-237 Plastic Package

Boca Semiconductor Corp.

BSC

http://www.bocasemi.com

2N6714
2N6715
2N6716

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Designed for General purpose Medium Power Amplifier and Switching Circuits.

E B C

1 = EMITTER
2 = BASE
3 = COLLECTOR

ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS

1 2 3

Rating Symbol

Collector-Emitter Voltage V

Collector-Base Voltage V

Emitter-Base Voltage V

Collector Current – Continuous I

Power Dissipation @ Ta=25ºC P

Operating And Storage Junction T

CEO

CBO

EBO

C

D

j,Tstg

Temperature Range

2N67142N6714

2N6714

2N67142N6714

2N67152N6715

2N6715

2N67152N6715

2N67162N6716

2N6716 Units

2N67162N6716

30 40 60 V

40 50 60 V

- 5.0 - V

- 1.5 - A

- 850 - mW

-55 to +150 º C

ELECTRICAL CHARACTERISTICSELECTRICAL CHARACTERISTICS

Boca Semiconductor Corp.

BSC

http://www.bocasemi.com

ELECTRICAL CHARACTERISTICS (Ta =25ºC unless otherwise specified)

ELECTRICAL CHARACTERISTICSELECTRICAL CHARACTERISTICS

DescriptionDescription

Description

DescriptionDescription

SymbolSymbol

Symbol

SymbolSymbol

Min.Min.

Min.

Min.Min.

Max.Max.

Max.

Max.Max.

Collector Cutoff Current

V

=40V, IE=0

CB

=50V, IE=0

V

CB

=40V, IE=0

V

CB

2N67142N6714

2N6714 I

2N67142N6714
2N67152N6715

2N6715 - 100 nA

2N67152N6715
2N67162N6716

2N6716 - 100 nA

2N67162N6716

CBO

- 100 nA

D.C. Current Gain

=10mA, VCE=1V

I

C

I

=100mA, VCE=1V

C

I

=1A, VCE=1V

C

=50mA, VCE=1V

I

C

I

=250mA, VCE=1V

C

I

=500mA, VCE=1V

C

2N6714/67152N6714/6715

2N6714/6715 h

2N6714/67152N6714/6715
2N6714/67152N6714/6715

2N6714/6715 60 -

2N6714/67152N6714/6715
2N6714/67152N6714/6715

2N6714/6715 50 250

2N6714/67152N6714/6715

2N67162N6716

2N6716 80 -

2N67162N6716
2N67162N6716

2N6716 50 250

2N67162N6716
2N67162N6716

2N6716 20 -

2N67162N6716

FE

55 -

Collector-Emitter Saturation Voltage

I

=1A, IB=100mA

C

I

=250mA, IB=25mA

C

2N6714/67152N6714/6715

2N6714/6715 V

2N6714/67152N6714/6715
2N67162N6716

2N6716 - 0.35 V

2N67162N6716

CE(sat)

- 0.5 V

Base Emitter on Voltage

I

=1A, VCE=1V

C

2N6714/67152N6714/6715

2N6714/6715 V

2N6714/67152N6714/6715

BE(on)

- 1.2 V

2N6714
2N6715
2N6716

UnitUnit

Unit

UnitUnit

DYNAMIC CHARACTERISTICSDYNAMIC CHARACTERISTICS

DYNAMIC CHARACTERISTICS

DYNAMIC CHARACTERISTICSDYNAMIC CHARACTERISTICS

Output Capacitance

V

=10V, IE=0,

CB

ALLALL

ALL C

ALLALL

f=1MHz

Current-Gain-Bandwidth Product

I

=50mA, VCE=1V

C

2N6714/67162N6714/6716

2N6714/6716 f

2N6714/67162N6714/6716
2N67152N6715

2N6715 50 400 MHz

2N67152N6715

ob

T

-20pF

50 500 MHz