BOCA 2N6491, 2N6490, 2N6489, 2N6488, 2N6487 Datasheet
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IS / IECQC 700000
IS / IECQC 750100
TO-220 Plastic Package
http://www.bocasemi.com page: 1
Boca Semiconductor Corp.
BSC
2N6486, 2N6487, 2N6488
2N6489, 2N6490, 2N6491
2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS
2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS
General Purpose Amplifier and Switching Applications
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
C
B
F
H
A
1
N
L
23
K
D
G
E
OO
J
M
DIM MIN. MAX.
All diminsions in mm.
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Collector current I
Total power dissipation up to T
= 25°C P
C
Junction temperature T
Collector-emitter saturation voltage
= 5 A; IB = 0.5 A V
I
C
D.C. current gain
= 5 A; VCE = 4 V h
I
C
A 14. 42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12. 70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
6486 6487 6488
6489 6490 6491
max. 50 70 90 V
CBO
max. 40 60 80 V
CEO
CEsat
max. 15 A
max. 75 W
max. 150 °C
max. 1.3 V
min. 20
C
tot
j
FE
max. 150
RATINGS (at T
=25°C unless otherwise specified)
A
Limiting values 6486 6487 6488
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
CBO
CEO
EBO
max. 50 70 90 V
max. 40 60 80 V
max. 5.0 V
6489 6490 6491
2N6486, 2N6487, 2N6488
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2N6489, 2N6490, 2N6491
Collector current I
Base current I
Total power dissipation up to T
= 25°C P
C
C
B
tot
max. 15 A
max. 5. 0 A
max. 75 W
Derate above 25°C max. 0. 6
Total power dissipation up to TA = 25°C P
tot
max. 1. 8 W
Derate above 25°C max. 0.014
Junction temperature T
Storage temperature T
j
stg
max. 150 °C
–65 to +150 °
THERMAL RESISTANCE
From junction to ambient R
From junction to case R
th j–a
th j–c
70 °
1.67 °
CHARACTERISTICS
= 25°C unless otherwise specified
T
amb
6486 6487 6488
6489 6490 6491
Collector cutoff current
= 0; VCE = 20 V I
I
B
= 0; VCE = 30 V I
I
B
= 0; VCE = 40 V I
I
B
= 1.5 V; VCE = 45 V I
V
EB(off)
= 1.5 V; VCE = 65 V I
V
EB(off)
= 1.5 V; VCE = 85 V I
V
EB(off)
= 1.5 V; VCE = 40 V; TC=150°C I
V
EB(off)
= 1.5 V; VCE = 60 V; TC=150°C I
V
EB(off)
= 1.5 V; VCE = 80 V; TC=150°C I
V
EB(off)
CEO
CEO
CEO
CEX
CEX
CEX
CEX
CEX
CEX
max. 1 . 0 – – mA
max. – 1.0 – mA
max. – – 1.0 mA
max. 50 0 – – µA
max. – 50 0 – µA
max. – – 500 µA
max. 5 . 0 – – mA
max. – 5.0 – mA
max. – – 5.0 mA
Emitter cut-off current
= 0; VEB = 5 V I
I
C
EBO
max. 1. 0 mA
Breakdown voltages
= 200 mA; IB = 0 V
I
C
= 1 mA; IE = 0 V
I
C
= 200 mA; VBE = 1.5 V V
I
C
= 1 mA; IC = 0 V
I
E
CEO(sus)
CBO
CEX(sus)
EBO
* min. 40 60 80 V
min. 50 70 90 V
* min. 50 70 90 V
min. 5.0 V
Saturation voltages
= 5 A; IB = 0.5 A V
I
C
= 15 A; IB = 5 A V
I
C
* max. 1. 3 V
CEsat
* max. 3. 5 V
CEsat
Base-emitter on voltage
= 5 A; VCE = 4 V V
I
C
= 15 A; VCE = 4 V V
I
C
* max. 1.3 V
BE(on)
* max. 3.5 V
BE(on)
D.C. current gain
= 5 A; VCE = 4 V hFE* min. 20
I
C
max. 150
= 15 A; VCE = 4 V hFE* min. 5.0
I
C
Transition frequency
= 1 A; VCE = 4 V; f = 1 MHz f
I
C
T(1)
min. 5.0 MHz
Small signal current gain
= 1.0A; VCE = 4V; f = 1.0 KHz h
I
C
fe
min. 25
W/°C
W/°C
C
C/W
C/W
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%
(1) f
= |hfe|• f
T
test
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