BOCA 2N6126, 2N6125, 2N6124, 2N6123, 2N6122 Datasheet

3

IS / IECQC 700000
IS / IECQC 750100

TO-220 Plastic Package

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Boca Semiconductor Corp.

BSC

2N6121, 2N6122, 2N6123
2N6124, 2N6125, 2N6126

2N6121, 6122, 6123 NPN PLASTIC POWER TRANSISTORS
2N6124, 6125, 6126 PNP PLASTIC POWER TRANSISTORS

Medium Power Linear and Switching Applications

C

B

F

H

A

1

N

L

ABSOLUTE MAXIMUM RATINGS

Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Collector current I
Total power dissipation up to T
Junction temperature T
Collector-emitter saturation voltage

= 1.5 A; IB = 0.15 A V

I

C

D.C. current gain

= 1.5 A; VCE = 2 V h

I

C

23

K

D

G

E

OO

J

M

= 25°C P

C

DIM M IN. M AX.

A 14. 42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43

J0.56
K 12. 70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7

All diminsions in mm.

PIN CONFIGURATION

1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

1

max. 45 60 80 V

CBO

max. 45 60 80 V

CEO

CEsat

max. 4.0 A
max. 40 W
max. 150 °C

max. 0.6 V

min. 25 25 20
max. 100 100 80

C

tot
j

FE

4

2

6121 6122 6123
6124 6125 6126

RATINGS (at T

Limiting values 6121 6122 6123

Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V

=25°C unless otherwise specified)

A

CBO
CEO
EBO

6124 6125 6126

max. 45 60 80 V
max. 45 60 80 V
max. 5.0 V

2N6121, 2N6122, 2N6123

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2N6124, 2N6125, 2N6126

Collector current I
Collector current (Peak) I
Base current I
Total power dissipation up to T

= 25°C P

C

C
CM
B

tot

max. 4.0 A
max. 7.0 A
max. 1.0 A

max. 40 W
Derate above 25°C max. 320
Junction temperature T
Storage temperature T

j
stg

max. 150 °C

–65 to +150

THERMAL RESISTANCE

From junction to case R

th j–c

3.12 °C/W

CHARACTERISTICS

= 25°C unless otherwise specified

T

amb

6121 6122 6123
6124 6125 6126

Collector cutoff current

= 0; VCE = 45 V I

I

B

= 0; VCE = 60 V I

I

B

= 0; VCE = 80 V I

I

B

= 1.5 V; VCE = 45 V I

V

EB(off)

= 1.5 V; VCE = 60 V I

V

EB(off)

= 1.5 V; VCE = 85 V I

V

EB(off)

V

= 1.5 V; VCE = 45 V; TC = 125°C

EB(off)

V

= 1.5 V; VCE = 60 V; TC = 125°C

EB(off)

V

= 1.5 V; VCE = 80 V; TC = 125°C

EB(off)

CEO
CEO
CEO
CEX
CEX
CEX

max. 1.0 – – mA

max. – 1.0 – mA

max. – – 1.0 m A

max. 0.1 – – mA

max. – 0.1 – mA

max. – – 0.1 m A

I

max. 2.0 – – mA

CEX

I

max. – 2.0 – m A

CEX

I

max. – – 2. 0

CEX

mA

= 0; VCB = 45 V I

I

E

= 0; VCB = 60 V I

I

E

= 0; VCB = 80 V I

I

E

CBO
CBO
CBO

max. 0.1 – – mA

max. – 0.1 – mA

max. – – 0.1 m A
Emitter cut-off current

= 0; VEB = 5 V I

I

C

EBO

max. 1.0 mA
Breakdown voltages

= 100 mA; IB = 0 V

I

C

= 1 mA; IE = 0 V

I

C

= 1 mA; IC = 0 V

I

E

CEO(sus)
CBO
EBO

* min. 45 60 80 V

min. 45 60 80 V

min. 5.0 V
Saturation voltages

= 1.5 A; IB = 0.15 A V

I

C

= 4 A; IB = 1.0 A V

I

C

* max. 0. 6 V

CEsat

* max. 1. 4 V

CEsat

Base-emitter on voltage

= 1.5 A; VCE = 2 V V

I

C

* max. 1.2 V

BE(on)

D.C. current gain

= 1.5 A; VCE = 2 V hFE* min. 25 25 20

I

C

max. 10 0 100 80

= 4 A; VCE = 2 V hFE* min. 10 10 7.0

I

C

Small signal current

= 0.1 A; VCE = 2 V; f = 1.0 KHz h

I

C

fe

min. 25
Transition frequency at f = 1 MHz

= 1 A; VCE = 4 V f

I

C

T

min. 2.5 MHz
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.

mW/°C

ºC