BOCA 2N5682, 2N5681, 2N5680, 2N5679 Datasheet

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681
Boca Semiconductor Corp.ī˜
BSC
http://www.bocasemi.com page: 1
2N5680 2N5682 PNP NPN TO-39 TO-39
These Are High Voltage & High Current, General Purpose Transistors
ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5679 2N5680 UNITS
2N5681 2N5682 Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Base Current Power Dissipation @Ta=25 degC Derate Above 25deg C Power Dissipation @Tc=25 degC Derate Above 25deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junction to Ambient ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N5679 2N5680 UNITS
Collector -Emitter Voltage Collector-Cut off Current
VCEO 100 120 V VCBO 100 120 V VEBO 4.0 V
IC 1.0 A IB 0.5 A
PD 1.0 W
5.7 mW/deg C
PD 10 W
57 mW/deg C
Tj, Tstg -65 to +200 deg C
Rth(j-c) 17.5 deg C/W Rth(j-a) 175 deg C/W
2N5681 2N5682
VCEO(sus) IC=10mA,IB=0 >100 >120 V
ICBO VCB=100V, IE=0 <1.0 - uA
VCB=120V, IE=0 - <1.0 uA
ICEO VCE=70V, IB=0 <10 - uA
VCE=80V, IB=0 - <10 uA
ICEX VCE=100V,VEB=1.5V <1.0 - uA
VCE=120V,VEB=1.5V - <1.0 uA
TC=150 deg C VCE=100V,VEB=1.5V <1.0 - mA VCE=120V,VEB=1.5V - <1.0 mA
Emitter-Cut off Current
IEBO VEB=4V, IC=0 <1.0 <1.0 uA
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N5679-82
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DESCRIPTION SYMBOL TEST CONDITION 2N5679 2N5680 UNITS
2N5681 2N5682
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter on Voltage
SMALL SIGNAL CHARACTERISTICS Small Signal Current Gain
Out-Put Capacitance
Transistors Frequency
*Pulse Test: Pulse Width: =300us, Duty Cycle=2%
hFE* IC=1A,VCE=2V >5.0 -
IC=250mA,VCE=2V 40-150 40-150
VCE(Sat)* IC=250mA,IB=25mA <0.60 <0.60 V
IC=500mA,IB=50mA <1.0 <1.0 V IC=1A, IB=200mA <2,0 <2.0 V
VBE(on)* IC=250mA,VCE=2V <1.0 <1.0 V
hfe IC=200mA, VCE=1.5V >20 >20
f=1kHz
Cob VCB=20V, IE=0 <50 <50 pF
f=1MHz
ft IC=100mA, VCE=10V >30 >30 MHz
f=10MHz
TO-39 Metal Can Package
A
B
DIM MIN MAX
A 8.50 9.39
B 7.74 8.50
C 6.09 6.60
C
E
D 0.40 0.53
Eā€”0.88
F 2.41 2.66
G 4.82 5.3 3
K
H 0.71 0.86
J 0.73 1.02
K12.70 ā€”
L 42 DEG 48 DEG
All dimensio ns a re in mm
D
G
2
1
3
L
H
J
F
2
3
PIN CONFIGURATION
1. EM ITTE R
2. BASE
3. C O LLE CTO R
1
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