BOCA 2N5551 Datasheet
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551
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Boca Semiconductor Corp.
BSC
TO- 92
CBE
High Voltage NPN Transistor For General Purpose And Telephony Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION SYMBOL VALUE UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25 degC
Derate Above 25 deg C
Power Dissipation @Tc=25 degC
Derate Above 25 deg C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
(1) Rth (j-a) is measured with the device soldered into a typical printed circuit board
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN T Y P MAX UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector-Cut off Current
VCEO 160 V
VCBO 180 V
VEBO 6.0 V
IC 600 mA
PD 625 mW
5.0 mw/deg C
PD 1.5 W
12 mw/deg C
Tj, Tstg -55 to +150 deg C
Rth(j-c) 125 deg C/W
Rth(j-a) (1) 357 deg C/W
VCEO IC=1mA,IB=0 160 - - V
VCBO IC=100uA.IE=0 180 - - V
VEBO IE=10uA, IC=-0 6.0 - - V
ICBO VCB=160V, IE=0 - - 50 nA
Ta=100 deg C
VCB=160V, IE=0 - - 50 uA
Emitter-Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
IEBO VEB=4V, IC=0 - - 50 nA
hFE* IC=1mA,VCE=5V 80 - -
IC=10mA,VCE=5V 80 - 250
IC=50mA,VCE=5V 30 - -
VCE(Sat)* IC=10mA,IB=1mA - - 0.15 V
IC=50mA,IB=5mA - - 0.2 V
VBE(Sat) * IC=10mA,IB=1mA - - 1.0 V
IC=50mA,IB=5mA - - 1.0 V
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified
)
y
q
y
p
p
g
y Cy
http://www.bocasemi.com
2N5551
DESCRIPTION SYMBOL TEST CONDITION MIN T Y P MAX UNIT
namic Characteristics
D
Small Signal Current Gain
hfe IC=1mA, VCE=10V 50 - 200
f=1KHz
Transition Fre
ut Capacitance
Out
ut Capacitance
In
Noise Fi
uenc
ure
*Pulse Test: Pulse Width=300us, Dut
ft VCE=10V,IC=10mA, 100 - 300 MHz
Cob VCB=10V, IE=0 - - 6.0 pF
Cib VEB=0.5V, IC=0 - - 20 pF
NF VCE=5V, IC=250uA - - 8.0 dB
cle=2%
TO-92 Plastic Package
B
AK
3 2 1
D
D
A
A
G
F
F
SEC AA
E
DIM MIN. MAX.
A 4.32 5.33
B 4.45 5.20
C 3.1 8 4.19
3 2 1
H
C
D 0.4 1 0.55
E 0.35 0.50
F5 DEG
PIN CONFIGURATION
1. COLLECTOR
2. BASE
3. EMITTER
G 1.14 1.40
H 1.1 4 1.53
K 12.70 —
All diminsions in mm.
3
f=100MHz
f=1MHz
f=1MHz
R=1kohm, f=10Hz to
15.7kHz
MECHANICAL DATA
T
hh
H1
H0
t1
t
All dimensions in mm unless specified otherwise
1
2
ITE M
BODY WIDTH
BODY HEIGHT
BODY THICKNESS
PITCH OF COMPONENT
FEED HOLE PITCH
FEED HOLE CENTRE TO
COMPONENT CENTRE
DISTANCE BETWEEN OUTER
LEADS
CO M PO NE N T A LIG N M EN T
TAPE WIDTH
HOLD-DOWN TAPE WIDTH
HOLE POSITION
HOLD-DOWN TAPE POSITION
LEAD WIRE CLINCH HEIGHT
COMPONENT HEIGHT
LENGTH OF SNIPPED LEADS
FEED HOLE DIAMETER
TOTAL TAPE THICKNESS
LEAD - TO - LEAD DISTANCEF1,
CLINCH HEIGHT
PULL - OUT FORCE
NOTES
1. MAXIMUM A LIGNMEN T DEVIATION BETWE EN LEAD S NOT TO BE GR EATER THAN 0.2 mm .
2. MAXIMUM NON-CUMULATIVE VARIATION BETWEEN TAPE FEED HOLES SHALL NOT EXCEED 1 mm IN 20
PIT CH ES.
3. HOLDDOW N TAPE N OT TO EXC EED BE YOND TH E EDG E(S) OF CARRIER TAPE AN D THERE SHALL BE NO
EXPOSU RE O F ADHESIVE.
4. NO MOR E THAN 3 CONSE CUTIVE MISSING CO MPON ENTS ARE PERM ITTED.
5. A TAPE TRAILER, HAVING AT LEAST TH REE FE ED HOLES ARE R EQUIRED AF TER THE LAS T COM PON ENT.
TO-92 Transistors on Tape and Ammo Pack
Ammo Pack Style
Adhesive Tape on Top Side
P
A
L
A1
F1 F2
F
P2
Po
(p)
Do
SYMBOL
A1
Po
P2
W
Wo
W1
W2
Ho
H1
Do
F2
H2
(P)
W2
A
T
P
F
h
L
t
Wo
LABEL
W1
MIN.
4.0
4.8
3.9
6N
W
FLAT SIDE
1
.
7
7
"
SPEC IFICATION
NOM.
MAX.
4.8
5.2
4.2
12.7
12.7
6.35
5.08
0
1
18
6
9
0.5
16
23.25
11. 0
4
1.2
2.54
3
"
3
1
Flat Side of Transistor and
Adhesive Tape Visible
2000 pcs./Ammo Pack
TOL .
±1
CUMULATIVE PITCH
±0.3
ERRO R 1.0 mm/20
PITCH
TO BE MEASURED AT
±0.4
BO TT OM O F C LIN C H
+0.6
-0.2
AT TO P OF BO DY
±0.5
±0.2
+0.7
-0.5
±0.2
±0.5
±0.2
t1 0.3 - 0.6
+0.4
-0.1
REMARKS
D
E
E
F
Carrier
Strip
8.2"
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