BOCA 2N4923 Datasheet
NPN SILICON EPITAXIAL TRANSISTOR 2N4923
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
TO-126
General Purpose Power Transistor
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
DESCRIPTION VALUE UNIT
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Base Current
Power Dissipation @ Tc=25 deg C
Derate Above 25 deg C
Operating And Storage Junction
Temperature Range
Lead Temperature for Soldering 1/16"
from Body for 10 Seconds.
Thermal Resistance
Junction to Case
VCBO 80 V
VCEO 80 V
VEBO 5.0 V
IC 3.0 A
IB 1.0 A
PD 30 W
0.24 W/deg C
Tj, Tstg -65 to +150 deg C
TL 260 deg C
Rth (j-c) 4.16 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector -Emitter Sustaining Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter on Voltage
DYNAMIC CHARACTERISTICS
Transistors frequency
Output Capacitance
Small Signal Current Gain
*Pulse Test PW=300us, Duty Cycle=2%
VCEO(sus) IC=100mA, IB=0 80 - - V
ICEO VCE=40V, IB=0 - - 0.5 mA
ICBO VCB=80V, IE=0 - - 0.1 mA
ICEX VCB=80V,VEB(0ff)=1.5V - - 0.1 mA
Tc=125 deg C
VCB=80V,VEB(0ff)=1.5V - - 0.5 mA
IEBO VEB=5V, IC=0 - - 1.0 mA
hFE * IC=50mA,VCE=1V 40 - - -
IC=500mA,VCE=1V 30 150
IC=1A,VCE=1V 10 - VCE(sat)* IC=1A, IB=0.1A - 0.6 V
VBE(sat)* IC=1A, IB=0.1A - 1.3 V
VBE(on) * IC=1A,VCE=1V - 1.3 V
ft IC=250mA,VCE=10V,f=1MHz 3.0 - - MHz
Cob VCB=10V, IE=0, f=100kHz - - 100 pF
hfe IC=250mA,VCE=10V,f=1kHz 25 - -
Continental Device India Limited
Data Sheet
Page 1 of 2
TO-126 (SOT-32) Plastic Package
C
N
P
S
1
2
3
A
B
1
2
3
PIN CONFIGURATION
1. EM ITTE R
2.
COLLECTOR
3.
BASE
L
DIM MIN. MAX.
A7.4 7.8
B 10.5 10.8
C2.4 2.7
D0.7 0.9
E
2.25 TYP.
F 0.4 9 0 .75
G 4 .5 TY P.
L 15.7 TYP.
D
M1.27 TYP.
N3.75 TYP.
M
F
E
G
P3.0 3.2
S 2.5 TY P.
All dimensions in mm.
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