BOCA 2N4036 Datasheet
PNP SILICON PLANAR TRANSISTOR 2N4036
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
TO-39
General Purpose Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Base Current
Collector Current -Continuous
Power Dissipation @ Tc=25 deg C
Linear Derating Factor
Power Dissipation @ Ta=25 deg C
Linear Derating Factor
Operating & Storage Junction
Temperature Range
Lead Temperature 1/16" from Case
for 10 Seconds
Thermal Resistance
Junction to Case
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector -Emitter (sat) Voltage
Base -Emitter (sat) Voltage
Small- Signal Characteristics
Current Gain- High Frequency
VCEO 65 V
VCBO 90 V
VEBO 7.0 V
IB 0.5 A
IC 1.0 A
PD 5.0 W
28.6 mW/deg C
PD 1.0 W
5.72 mW/deg C
Tj, Tstg -65 to +200 deg C
TL 230 deg C
Rth (j-c) 35 deg C/W
VCEO IC=10mA, IB=0 65 - V
VCBO IC=100uA, IE=0 90 - - V
ICEX VCE=85V, VBE=1.5V - - 0.1 mA
ICBO VCB=90V, IE=0 - 1.0 uA
IEBO VBE=7V, IC=0 - 10 uA
hFE 0.1mA, VCE=10V 20 - -
IC=150mA, VCE=2V 20 200
IC=150mA, VCE=10V 40 - 140
IC=500mA, VCE=10V 20 VCE(sat) IC=150mA, IB=15mA - 0.65 V
VBE(sat) IC=150mA, IB=15mA - 1.4 V
lhfel IC=50mA,VCE=10V, f=20MHz 3.0 - -
Switching Characteristics
Rise time
Sorage time
Fall time
Turn-on time
Turn-off time
Continental Device India Limited
tr IB1=15mA,IC=150mA, VCE=30V - 70 ns
ts IB2=15mA,IC=150mA, VCE=30V - 600 ns
tf IB2=15mA,IC=150mA, VCE=30V - 100 ns
ton IC=150mA, VCE=30V, IB1=IB2= - 110 ns
toff 15mA - 700 ns
Data Sheet
Page 1 of 2
TO-39 Metal Can Package
http://www.bocasemi.com
A
B
DIM MIN MAX
A 8.50 9.3 9
B 7.74 8.5 0
C 6.09 6.60
C
E
D 0.4 0 0.53
E—0.88
F 2.41 2.66
G 4.82 5.33
K
H 0.71 0.86
J 0.73 1.02
K12.70 —
L 42 DEG 48 DEG
All dime nsio ns a re in mm
D
G
2
1
3
L
H
J
F
2
3
PIN CONFIGURATION
1. EM ITTE R
2. BASE
3. COLLECTOR
1
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