BOCA 2N2484 Datasheet

NPN SILICON PLANAR TRANSISTOR 2N2484

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Boca Semiconductor Corp

BSC

http://www.bocasemi.com page : 1

TO-18

This transistors is primarily intended for use in high performance, low level,

ow noise amp

ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT

er applications

Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25 degC
Derate Above 25 deg C
Power Dissipation @Tc=25 degC
Derate Above 25 deg C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in Free Air
Lead Temperature
1/16" from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION Min MAX UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector-Cut off Current

Emitter-Cut off Current
Collector Emitter Saturation Voltage
Base Emitter on Voltage

VCEO 60 V
VCBO 60 V
VEBO 6.0 V
IC 50 mA
PD 360 mW

2.06 mw/deg C

PD 1.20 W

6.85 mw/deg C

Tj, Tstg -65 to +200 deg C

Rth(j-c) 146 deg C/W
Rth(j-a) * 485 deg C/W
TL 300 deg C

VCEO** IC=10mA,IB=0 60 - V
VCBO IC=10uA.IE=0 60 - V
VEBO IE=10uA, IC=-0 6.0 - V
ICBO VCB=45V, IE=0 - 10 nA

Ta=150 deg C

VCB=45V, IE=0 - 10 uA
IEBO VEB=5V, IC=0 - 10 nA
VCE(Sat) IC=1mA,IB=0.1mA - 0.35 V
VBE(on) IC=0.1mA, VCE=5V 0.5 0.7 V

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N2484

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DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT
DC Current Gain

Dynamic Characteristics
Transition Frequency

Out-put Capacitance

In-put Capacitance

Noise Figure

Small Signal Characteristics (@ f=1kHz unless otherwise specified)

hFE IC=1uA, VCE=5V 30 -

IC=10uA, VCE=5V 100 500

Ta=55 deg C

IC=10uA, VCE=5V 20 -

IC=100uA, VCE=5V 175 -

IC=500uA, VCE=5V 200 -

IC=1mA, VCE=5V 250 -

IC=10mA,VCE=5V** - 800

ft VCE=5V,IC=0.05mA 15 - MHz

f=5MHz

VCE=5V,IC=0.5mA, 60 - MHz

f=30MHz
Cobo VCB=5V, IE=0 - 6.0 pF

f=140kHz
Cibo VEB=0.5V, IC=0 - 6.0 pF

f=140kHz
NF VCE=5V, IC=10uA

Rs=10kohms

f=100Hz, BW'=20Hz - 10 dB

f=1kHz, BW=200Hz - 3.0 dB

f=10kHz, BW=2kHz - 2.0 dB

f=10Hz to 15.7kHz,BW=15.7KHz 3.0 dB

Input Impedence

Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
*Rth(j-a) is measured with the device soldered into a typical printed Circuit board.

**Pulse Test: Pulse Width=300us, Duty Cycle=2%

hie IC=1mA, VCE=5V 3.5 24 kohms

hre IC=1mA, VCE=5V - 800 x10
hfe IC=1mA, VCE=5V 150 900
hoe IC=1mA, VCE=5V - 40 umhos

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