BOCA 2N2369A, 2N2369 Datasheet
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369
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Boca Semiconductor Corp.
BSC
http://www.bocasemi.com page : 1
2N2369A
TO-18
APPLICATIONS
2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With
Low Power & High Speed Switching Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector -Emitter Voltage
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Collector Current Peak(10us pulse)
Power Dissipation@ Ta=25 degC
Derate Above 25 deg C
@Tc=25 deg C
@Tc=100 deg C
Derate Above100 deg C
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT
Collector -Emitter Voltage
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector-Cut off Current
Base Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current
VCEO 15 V
VCES 40 V
VCBO 40 V
VEBO 4.5 V
IC 200 mA
IC(peak) 500 mA
PD 360 mW
2.06 mW/de
PD 1.2 W
PD 0.68 W
6.85 mW/de
Tj, Tstg -65 to +200 deg C
VCEO*(sus
VCES IC=10uA, VBE=0 >40 >40 V
VCBO IC=10uA, IE=0 >40 >40 V
VEBO IE=10uA, IC=0 >4.5 >4.5 V
ICBO VCB=20V, IE=0 <400 - nA
ICES VCE=20V, VBE=0 - <400 nA
IB VCE=20V, VBE=0 - <400 nA
VCE(Sat)* IC=10mA,IB=1mA <0.25 <0.20 V
VBE(Sat) * IC=10mA,IB=1mA 0.7-0.85 0.7-0.85 V
hFE* IC=10mA, VCE=1V 40-120 40-120
IC=10mA, IB=0 >15 >15 V
VCB=20V, IE=0, Ta=150 deg C <30 - uA
IC=30mA,IB=3mA - <0.25 V
IC=100mA,IB=10mA - <0.50 V
IC=10mA,IB=1mA,Ta= +125 deg C - <0.30 V
IC=30mA,IB=3mA - <1.15 V
IC=100mA,IB=10mA - <1.60 V
IC=10mA,IB=1mA,Ta= +125 deg C - >0.59 V
IC=10mA,IB=1mA, Ta= -55 deg C - <1.02 V
IC=10mA,VCE=1V, Ta= -55 deg C >20 IC=10mA,VCE=0.35V, Ta= -55 de
- >20
C
C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N2369/2369A
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DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT
DC Current
Small Signal Characteristics
Transition Frequency
Output Capacitance
hFE* IC=10mA,VCE=0.35V - 40-120
IC=30mA,VCE=0.4V - >30
IC=100mA,VCE=1V - >20
IC=100mA,VCE=2V >20 -
ft VCE=10V,IC=10mA, f=100MHz >500 >500 MHZ
Cobo VCB=5V, IE=0, f=140kHz <4.0 <4.0 pF
Turn on Time
Turn off Time
Storage Time
*Pulse Test : Pulse Width =300us, Duty Cycle=2%
A
B
C
K
ton IC=10mA, IB1=3mA, <12 <12 ns
toff IC=10mA, IB1=3mA, - <15 ns
ts IC=100mA, IB1=IB=10mA, VCC=10
IB= -1.5mA, VCC=3V
IB2= -1.5mA, VCC=3V
TO-18 Metal Can Package
G
2
1
H
L
3
<13 <13 ns
DIM MIN M AX
A 5 .24 5.8 4
B 4 .52 4.9 7
C 4.3 1 5 .33
D 0.4 0 0 .53
E—0.76
F—1.27
G—2.97
H 0.9 1 1 .17
J 0.71 1.2 1
F
K12.70 —
L45 DEG
All diminsions in mm.
J
D
PIN CONFIGURATION
1. E MIT TE R
2. BASE
1
2
3. COLLECTOR
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