BOCA 2N2222A, 2N2221A Datasheet

NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221A

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Boca Semiconductor Corp.

BSC

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2N2222A
TO-18

Switching And Linear Application DC And VHF Amplifier Applications

ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL 2N2221A,22A UNIT

Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25 degC
Derate Above 25deg C
@ Tc=25 degC
Derate Above 25deg C
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION SYMBOL TEST CONDITION VALUE

Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current

Emitter-Cut off Current
Base-Cut off Current
Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

VCEO 40 V
VCBO 75 V
VEBO 6.0 V
IC 800 mA
PD 500 mW

2.28 mW/deg C

PD 1.2 W

6.85 mW/deg C

Tj, Tstg -65 to +200 deg C

MIN MAX UNIT

VCEO IC=10mA,IB=0 40 - V
VCBO IC=10uA.IE=0 75 - V
VEBO IE=10uA, IC=0 6.0 - V
ICBO VCB=60V, IE=0 - 10 nA

Ta=150 deg C

VCB=60V, IE=0 - 10 uA
ICEX VCE=60V, VEB=3V - 10 nA
IEBO VEB=3V, IC=0 - 10 nA
IBL VCE=60V, VEB=3V - 20 nA
VCE(Sat)* IC=150mA,IB=15mA - 0.3 V

IC=500mA,IB=50mA 1.0 V
VBE(Sat) * IC=150mA,IB=15mA - 0.6-1.2 V

IC=500mA,IB=50mA - 2.0 V

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N2221A to 2N2222A

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DESCRIPTION SYMBOL TEST CONDITION 2221A 2222A UNIT
DC Current Gain

DYNAMIC CHARACTERISTICS

Small Signal Current Gain

Input Impedance

Voltage Feedback Ratio

Out put Admittance

Collector Base Time Constant

Real Part Common-Emitter High Frequency
Input Impedance
Noise Figure

hFE IC=0.1mA,VCE=10V >20 >35

IC=1mA,VCE=10V >25 >50
IC=10mA,VCE=10V >35 >75

Ta=55 deg C

IC=10mA,VCE=10V >15 >35
IC=150mA,VCE=10V 40-120 100-300
IC=150mA,VCE=1V >20 >50
IC=500mA,VCE=10V >25 >40

ALL f=1kHz
hfe IC=1mA, VCE=10V 30-150 50-300

IC=10mA, VCE=10V 50-300 75-375

hie IC=1mA, VCE=10V 1.0-3.5 2.0-8.0 kohms

IC=10mA, VCE=10V 0.2-1.0 0.25-1.25

hre IC=1mA, VCE=10V <5.0 <8.0 x10-4

IC=10mA, VCE=10V <2.5 <4.0

hoe IC=1mA, VCE=10V 3.0-15 5.0-35 umhos

IC=10mA, VCE=10V 10-100 25-200

rb'Cc IE=20mA, VCB=20V <150 <150 ps

f=31.8MHz
Re(hie) IC=20mA, VCE=20V <60 <60 ohms

f=300MHz
NF IC=100uA, VCE=10V - <4.0 dB

Rs=1kohms, f=1kHz

DYNAMIC CHARACTERISTICS
Transistors Frequency

Out-Put Capacitance

Input Capacitance

SWITCHING Time
Delay time
Rise time

Storage time
Fall time

*Pulse Condition: Pulse Width=300us, Duty Cycle=2%

ft IC=20mA, VCE=20V >250 >300 MHz

Cob VCB=10V, IE=0 <8.0 <8.0 pF

Cib VEB=0.5V, IC=0 <25 <25 pF

td IC=150mA,IB1=15mA <10 ns
tr VCC=30V,VBE=0.5V - <25 ns

ts IC=150mA, IB1= <225 ns
tf IB2=15mA, VCC=30V - <60 ns

f=100MHz

f=100kHz

f=100kHz