Blue Rocket BR3CG3906M, MMBT3906 Schematic [ru]
MMBT3906(BR3CG3906M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
高 hFE，低 V
CE(sat)
。
High DC Current Gain, Low Collector to Emitter Saturation Voltage.
用途 / Applications
用于普通放大及开关。
General purpose amplifier and switching.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN 1：Emitter PIN 2：Base PIN 3：Collector
放大及印章代码 / hFE Classifications & Marking
hFE Range
100～300
Marking ·H2A
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MMBT3906(BR3CG3906M)
V
V
V
V
(1)
V
(2)
Rev.C Feb.-2015 DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage V
Collector Current I
Collector Power Dissipation PC
Junction Temperature
Storage Temperature Range
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
oltage
Collector to Base Breakdown
oltage
Emitter to Base Breakdown
oltage
Collector Cut-Off Current I
符号
Symbol
IC=-10μA IB=0
V
CEO
IC=-1.0mA IE=0
V
CBO
IE=-10μA IC=0
V
EBO
CBO
Test Conditions
VCB=-30V IE=0
测试条件
V
V
T
CBO
CEO
EBO
C
Tj
stg
-40 V
-40 V
-5.0 V
-200 mA
300 mW
150 ℃
-55～150 ℃
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
-40 V
-40 V
-5.0 V
-0.05 μA
Emitter Cut-Off Current I
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Collector-Emitter Saturation
oltage
Collector-Emitter Saturation
oltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
h
(1)
h
(2)
h
(3)
h
(4)
h
(5)
V
V
(1) VBE(sat) (1)IC
(2) VBE(sat) (2)IC
EBO
FE(1)
FE(2)
FE(3)
FE(4)
FE(5)
CE(sat) (1) IC
CE(sat) (2)IC
VEB=-3.0V IC=0
VCE=-1.0V IC=-10mA
VCE=-1.0V IC=-100mA
VCE=-1.0V IC=-50mA
VCE=-1.0V IC=-1.0mA
VCE=-1.0V IC=-0.1mA
=-10mA IB=-1.0mA
=-50mA IB=-5.0mA
=-10mA IB=-1.0mA
=-50mA IB=-5.0mA
-0.05 μA
100
300
30
60
80
60
-0.25 V
-0.4 V
-0.65 -0.85 V
-0.95 V
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MMBT3906(BR3CG3906M)
Rev.C Feb.-2015 DATA SHEET
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Transition Frequency fT
Output Capacitance
Storage Time
Fall Time t
Delay Time t
Rise Time t
Input Capacitance Cib
符号
Symbol
C
ob
t
stg
f
d
r
测试条件
Test Conditions
=-20V IC=-10mA
V
CE
f=100MHz
VCB=-5.0V f=1.0MHz 4.5 pF
VCC=-3.0V IC=-10mA
=-IB2=-1.0mA
I
B1
VCC=-3.0V IC=-10mA
=-IB2=-1.0mA
I
B1
VCC=-3.0V VBE=-0.5V
=-10mA IB1=-1.0mA
I
C
VCC=-3.0V VBE=-0.5V
=-10mA IB1=-1.0mA
I
C
=-0.5V f=1.0MHz 10 pF
V
EB
最小值
Min
典型值
Typ
250 MHz
225 ns
75 ns
35 ns
35 ns
最大值
Max
单位
Unit
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