BL Galaxy Electrical Production specification
Dual NPN Small Signal Surface Mount Transistor T11
FEATURES
z A surper-minimold package houses 2 transistor.
z Excellent temperture response between these
2 transistor.
z High pairing property in h
E2、C1
FE
.
Pb
Lead-free
C2
B1 B2、E1
APPLICATIONS
z Dual NPN small signal surface mount transistor SOT-143
ORDERING INFORMATION
Type No. Marking Package Code
T11 T11 SOT-143
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Unit
V
V
V
I
P
Tj,T
CBO
CEO
EBO
C
D
stg
Collector-Base Voltage TR1
TR2
Collector-Emitter Voltage TR2 45 V
Emitter-Base Voltage TR1 5 V
Collector Current -Continuous 100 mA
Power Dissipation 200 mW
Junction and Storage Temperature -55 to+150
10
50
V
℃
Document number: BL/SSSTJ001 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Dual NPN Small Signal Surface Mount Transistor T11
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
CHARACTERISTICS of TR1(NPN Transistor)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Emitter-base breakdown voltage V
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
Output Capacitance C
(BR)CBO IC
(BR)EBO IE
EBO
FE
CE(sat)
BE(sat)
T
ob
=10μA IE=0 10 - V
=100μA IC=0 5 - V
VEB=5V IC=0
- 0.1 μA
VCE=5V IC=1mA 200 400
IC=100mA IB=5mA - 0.3 V
IC=100mA IB=5mA - 1 V
VCE=5V IC=10mA f=30MHz 150 - MHz
VCB=10V,f=1MHz,IE=0 - 3.5 pF
CHARACTERISTICS of TR2(NPN Transistor)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-base breakdown voltage V
Collector cut-off current I
Collector cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
Output Capacitance C
(BR)CBO IC
(BR)CEO IC
CBO
CEO
FE
CE(sat)
BE(sat)
T
ob
=100μA IE=0 50 - V
=100μA IB=0 45 - V
VCB=50V,IE=0 - 0.1 μA
VCE=35V IB=0
- 0.1 μA
VCE=5V IC=1mA 200 400
IC=100mA IB=5mA - 0.3 V
IC=100mA IB=5mA - 1 V
VCE=5V IC=10mA f=30MHz 150 - MHz
VCB=10V,f=1MHz,IE=0 - 3.5 pF
Document number: BL/SSSTJ001 www.galaxycn.com
Rev.A 2
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