BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor SS8550W
FEATURES
Pb
z Collector Current.(IC= 1.5A）
z Complementary To SS8550W.
z Collector Dissipation: P
=0.2W (TC=25°C)
C
APPLICATIONS
z High Collector Current.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
SS8550W Y2 SOT-323
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-40 V
-25 V
-5 V
-1.5 A
0.2 W
-55~150 ℃
Document number: BL/SSSTF062 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor SS8550W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V
(BR)CBO IC
V
I
CBO
I
CEO
I
EBO
IC=-0.1mA,IB=0 -25 V
(BR)CEO
IE=-100μA,IC=0 -5
(BR)EBO
=-100μA,IE=0 -40 V
VCB=-40V,IE=0 -0.1 μA
VCE=-20V,IB=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
TYP MAX UNIT
V
VCE=-1V,IC=-100mA 120 400
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Base-emitter voltage
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
BEF
VCE=-1V,IC=-800mA
IC=-800mA, IB= -80mA
=-800mA, IB= -80mA
I
C
VCE=-10V, IC= -50mA
f=30MHz
VCB=-10V,IE=0,f=1MHz
IE=-1.5A
40
-0.5 V
-1.2 V
100 MHz
20 pF
-1.6 V
CLASSIFICATION OF h
FE(1)
Rank L H J
Range 120-200 200-350 300-400
Document number: BL/SSSTF062 www.galaxycn.com
Rev.A 2
Loading...