BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor SS8050
FEATURES
z Collector Current.(IC= 1.5A）
z Complementary To SS8550.
Pb
Lead-free
z Collector dissipation:P
=300mW(TC=25℃)
C
APPLICATIONS
z High Collector Current.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
SS8050 Y1 SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
40 V
25 V
6 V
1.5 A
300 mW
-55~150 ℃
Document number: BL/SSSTC086 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor SS8050
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V
(BR)CBO IC
V
I
CBO
I
CEO
I
EBO
IC=2mA,IB=0 25 V
(BR)CEO
IE=-100μA,IC=0 5
(BR)EBO
=100μA,IE=0 40 V
VCB=40V,IE=0 0.1 μA
VCE=20V,IB=0 0.1 μA
VEB=5V,IC=0 0.1 μA
TYP MAX UNIT
V
VCE=1V,IC=100mA 120 400
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
h
FE
V
CE(sat)
V
BE(sat)
V
BE
f
T
VCE=1V,IC=800mA
IC=800 mA, IB= 80mA
=800 mA, IB= 80mA
I
C
VCE=1V IC=10mA
VCE=10V, IC= 50mA
f=30MHz
40
0.5 V
1.2 V
1 V
100 MHz
CLASSIFICATION OF h
FE(1)
Rank L H J
Range 120-200 200-350 300-400
Document number: BL/SSSTC086 www.galaxycn.com
Rev.A 2
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