BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor S9018
FEATURES
z High current gain bandwidth product.
z power dissipation.(P
=200mW)
C
APPLICATIONS
z NPN epitaxial silicon transistor.
ORDERING INFORMATION SOT-23
Type No. Marking Package Code
S9018 J8 SOT-23
Pb
Lead-free
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
25 V
18 V
4 V
50 mA
200 mW
-55~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Collector cut-off current
V
(BR)CBO IC
V
I
CBO
I
CEO
IC=0.1mA,IB=0 18 V
(BR)CEO
IE=-100μA,IC=0 4
(BR)EBO
=100μA,IE=0 25 V
VCB=20V,IE=0 0.1 μA
VCE=15V,IB=0 0.1 μA
TYP MAX UNIT
V
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Document number: BL/SSSTC085 www.galaxycn.com
Rev.A 1
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
VEB=3V,IC=0 0.1 μA
VCE=5V,IC=1mA 70 190
IC=10 mA, IB= 1mA
=10 mA, IB= 1mA
I
C
0.5 V
1.4 V
VCE=5V, IC= 5mA
f=400MHz
600 MHz
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor S9018
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC085 www.galaxycn.com
Rev.A 2
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