BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor S9014
FEATURES
z Complementary To S9015.
z Excellent H
Linearity.
FE
Pb
Lead-free
z Power dissipation.(P
=0.2W)
C
APPLICATIONS
z Per-Amplifier low level & low noise.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
S9014 J6 SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
V
CBO
CEO
Collector-Base Voltage
Collector-Emitter Voltage
50 V
45 V
V
EBO
I
C
P
C
Tj,T
stg
Document number: BL/SSSTC083 www.galaxycn.com
Rev.A 1
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
5 V
100 mA
200 mW
-55~150 ℃
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor S9014
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
(BR)CBO IC
V
I
CBO
I
CEO
I
EBO
h
FE
V
V
f
T
IC=0.1mA,IB=0 45 V
(BR)CEO
IE=-100μA,IC=0 5
(BR)EBO
CE(sat)
BE(sat)
=100μA,IE=0 50 V
VCB=50V,IE=0 0.1 μA
VCE=35V,IB=0 0.1 μA
VEB=3V,IC=0 0.1 μA
VCE=5V,IC=1mA 200 1000
IC=100mA, IB= 5mA
=100mA, IB= 5mA
I
C
0.3 V
1 V
VCE=6V, IC= 20mA
f=30MHz
150 MHz
TYP MAX UNIT
V
CLASSIFICATION OF h
FE(1)
Rank L H
Range 200-450 450-1000
Document number: BL/SSSTC083 www.galaxycn.com
Rev.A 2
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