BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor S9013W
FEATURES
z High Collector Current.(IC= 500mA）
z Complementary To S9012.
Pb
Lead-free
z Excellent H
z Power dissipation.(P
Linearity.
FE
=200mW)
T
APPLICATIONS
z High Collector Current.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
S9013W J3 SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
40 V
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Document number: BL/SSSTF011 www.galaxycn.com
Rev.A 1
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
25 V
5 V
500 mA
200 mW
-55~150 ℃
BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor S9013W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V
(BR)CBO IC
V
I
CBO
I
CEO
I
EBO
IC=0.1mA,IB=0 25 V
(BR)CEO
IE=100μA,IC=0 5
(BR)EBO
=100μA,IE=0 40 V
VCB=40V,IE=0 0.1 μA
VCE=20V,IB=0 0.1 μA
VEB=5V,IC=0 0.1 μA
TYP MAX UNIT
V
VCE=1V,IC=50mA 120 400
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
h
FE
V
CE(sat)
V
BE(sat)
f
T
VCE=1V,IC=500mA
IC=500mA, IB= 50mA
=500mA, IB= 50mA
I
C
VCE=6V, IC= 20mA
f=30MHz
40
0.6 V
1.2 V
150 MHz
CLASSIFICATION OF h
FE(1)
Rank L H J
Range 120-200 200-350 300-400
Document number: BL/SSSTF011 www.galaxycn.com
Rev.A 2
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