BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor S9012
FEATURES
Pb
z High Collector Current.(IC= -500mA）
z Complementary To S9013.
z Excellent H
Linearity.
FE
APPLICATIONS
z High Collector Current.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
S9012 2T1 SOT-23
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-40 V
-25 V
-5 V
-500 mA
300 mW
-55~150 ℃
Document number: BL/SSSTC081 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor S9012
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
(BR)CBO IC
V
I
CBO
I
CEO
I
EBO
h
FE
V
V
f
T
C
IC=-1mA,IB=0 -25 V
(BR)CEO
IE=-100μA,IC=0 -5
(BR)EBO
CE(sat)
BE(sat)
ob
=-100μA,IE=0 -40 V
VCB=-40V,IE=0 -0.1 μA
VCE=-20V,IB=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
VCE=-1V,IC=-50mA 120 400
IC=-500mA, IB= -50mA
=-500mA, IB= -50mA
I
C
-0.6 V
-1.2 V
VCE=-6V, IC= -20mA
f=30MHz
VCB=-10V,IE=0,f=1MHz
150 MHz
5 pF
TYP MAX UNIT
V
CLASSIFICATION OF h
FE(1)
Rank L H J
Range 120-200 200-350 300-400
MARKING 2T1
Document number: BL/SSSTC081 www.galaxycn.com
Rev.A 2
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