BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor S8050
FEATURES
z High Collector Current.(IC= 500mA).
z Complementary To S8550.
z Excellent HFE Linearity.
Pb
Lead-free
z High total power dissipation.(P
=300mW)
C
APPLICATIONS
z High Collector Current.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
S8050 J3Y SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
V
CBO
CEO
Collector-Base Voltage
Collector-Emitter Voltage
40 V
25 V
V
EBO
I
C
P
C
Tj,T
stg
Document number: BL/SSSTC079 www.galaxycn.com
Rev.A 1
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
5 V
500 mA
300 mW
-55~150 ℃
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor S8050
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Collector cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
(BR)CBO IC
(BR)CEO
(BR)EBO
CBO
CEO
EBO
FE
CE(sat)
IC=500mA, IB= 50mA 1.2 V
BE(sat)
T
=100μA,IE=0 40 V
IC=0.1mA,IB=0 25 V
IE=100μA,IC=0 5 V
VCB=40V,IE=0 0.1 μA
VCE=20V,IB=0 0.1 μA
VEB=5V,IC=0 0.1 μA
VCE=1V,IC=50mA
V
=1V,IC=500mA
CE
IC=500mA, IB= 50mA 0.6 V
VCE=6V, IC= 20mA
f=30MHz
120
150 MHz
50
350
CLASSIFICATION OF h
Rank L H
Range 120-200 200-350
FE(1)
Document number: BL/SSSTC079 www.galaxycn.com
Rev.A 2
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