BL Galaxy Electrical Production specification
PLASTIC-ENCAPSULATE TRANSISTORS PXT8050(NPN)
FEATURES
z Commplimentray to PXT8550
Pb
Lead-free
APPLICATIONS
z This device is designed as a general purpose amplifier
and switching.
SOT-89
ORDERING INFORMATION
Type No. Marking Package Code
PXT8050 8050 SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value
V
V
V
I
I
Tj
T
C
B
CBO
CEO
EBO
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Base Current-Continuous
Junction Temperature
Storage Temperature
40 V
25 V
6 V
1.5 A
500 mA
150 ℃
-55-150 ℃
Unit
Document number: BL/SSSTG030 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PLASTIC-ENCAPSULATE TRANSISTORS PXT8050(NPN)
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
(BR)CBO IC
(BR)CEO IC
(BR)EBO IE
V
CBO
CEO
EBO
FE
CE(sat)
BE(sat)
=100μA, IE=0 40 V
=0.1mA ,IB=0 25 V
=100μA, IC=0 5 V
=40V, IE=0 0.1 uA
CB
VCE=20V,IE=0 0.1 uA
VEB=5V,IC=0 0.1 uA
VCE=1V, IC=100mA
V
=1V, IC=800mA
CE
85
40
400
IC=800mA ,IB=80mA 0.5 V
IC=800mA, IB=80mA 1.2 V
Base-emitter volatage VBE VCE=1V,IC=10mA 1 V
Base-emitter positive favor voltage V
Transition frequency f
T
BEF
IB=1A 1.55 V
VCE=10V,IC=50mA,
f=30MHz
100 MHz
Output Capacitance C
ob
VCB=10V, f=1MHz ,IE=0 15 pF
CLASSIFICATION OF hFE
Rank B C D D3
Range 85-160 120-200 160-300 300-400
Document number: BL/SSSTG030 www.galaxycn.com
Rev.A 2
(1)
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