BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor MMSTA55/MMSTA56
FEATURES
z Power dissipation.(PC=200mW).
z Epitaxial planar die construction.
z Also available in lead free version.
APPLICATIONS
z General purpose application and switching application.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
MMSTA55 K2H SOT-323
MMSTA56 K2G SOT-323
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage MMSTA55
MMSTA56
Collector-Emitter Voltage MMSTA55
MMSTA56
Emitter-Base Voltage MMSTA55
MMSTA56
Collector Current -Continuous -500 mA
Collector Dissipation 200 mW
Junction and Storage Temperature -55~150
-60
-80
-60
-80
-4 V
V
V
℃
Document number: BL/SSSTF063 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor MMSTA55/MMSTA56
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage V
Collector cut-off current I
Collector cut-off current I
DC current gain h
Collector-emitter saturation
voltage
Base-emitter on voltage V
(BR)CBO
V
(BR)CEO
(BR)EBO
CBO
CEO
FE
V
CE(sat)
BE(on)
IC=-100μA,IE=0 MMSTA55
MMSTA56
I
=-1mA,IB=0 MMSTA55
C
MMSTA56
IE=-100μA,IC=0 -4 V
VCB=-60V,IE=0 MMSTA55
V
=-80V,IE=0 MMSTA56
CB
VCE=-50V,IB=0 MMSTA55
V
=-60V,IB=0 MMSTA56
CE
VCE=-1V,IC=-10mA
V
=-1V,IC=-100mA
CE
IC=-100mA, IB=-10mA -0.25 V
VCE=-1V, IC=-100mA -1.2 V
-60
-80
-60
-80
100
100
V
V
-0.1
-0.1
-0.1
-0.1
μA
μA
Transition frequency f
T
VCE=-1V,IC= -100mA,
f=100MHz
50 MHz
Document number: BL/SSSTF063 www.galaxycn.com
Rev.A 2
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