BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMST5401
FEATURES
z Epitaxial planar die construction.
z Complementary NPN type available
(MMST5551).
z Also available in lead free version.
APPLICATIONS
z Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No. Marking Package Code
MMST5401 K4M SOT-323
Pb
Lead-free
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value UNIT
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
Tj ,T
stg
collector-base voltage -160 V
collector-emitter voltage -150 V
emitter-base voltage -5 V
collector current (DC) -0.6 A
Collector dissipation 0.2 W
Thermal resistance junction to ambient 625 °C/W
junction and storage temperature -55-150 °C
ELECTRICAL CHARACTERISTICS
Document number: BL/SSSTF055 www.galaxycn.com
Rev.A 1
@ Ta=25℃ unless otherwise specified
BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMST5401
Symbol Parameter Test conditions MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Collector-base breakdown voltage IC=-100μA,IE=0 -160
Collector-emitter breakdown voltage IC=-1mA,IB=0 -150
Emitter-base breakdown voltage IE=-10μA,IC=0 -5
collector cut-off current IE=0;V
emitter cut-off current IC=0; V
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
transition frequency
NF Noise figure
= -120V - -50 nA
CB
= -3V - -50 nA
EB
=-5V; IC=-1mA
V
CE
V
=-5V;IC=-10mA
CE
V
=-5V;IC=-50 mA
CE
I
=-50 mA; IB=-5mA
C
I
=-10mA; IB=-1mA
C
I
=-50mA;IB=-5mA
C
I
=-10mA; IB=-1mA
C
I
=-10mA; VCE= -10V,
C
f=100MHz
I
=-200mA,VCE=-5.0V,
C
f=100MHz
50
60
50
-
-
-
240
-
-0.5
-0.2
-1
-1
V
V
100 300 MHz
8 dB
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF055 www.galaxycn.com
Rev.A 2
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