BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor MMST2907A
FEATURES
z Power dissipation.(PC=200mW)
z Epitaxial planar die construction.
z Complementary NPN type MMST2222A.
Pb
Lead-free
APPLICATIONS
z General purpose application.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
MMST2907A K3F SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
-60 V
-60 V
-5 V
-600 mA
200 mW
625 ℃/W
-55~150 ℃
Document number: BL/SSSTF050 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor MMST2907A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Collector cut-off current I
Base cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
(BR)CBO IC
IC=-10mA,IB=0 -60 V
(BR)CEO
IE=-10μA,IC=0 -5 V
(BR)EBO
CBO
CEX
BL
FE
CE(sat)
BE(sat)
T
=-10μA,IE=0 -60 V
VCB=-50V,IE=0 -10 nA
VCE=-30V,V
VCE=-30V,V
VCE=-10V,IC=-0.1mA
V
=-10V,IC=-1.0mA
CE
V
=-10V,IC=-10mA
CE
V
=-10V,IC=-150mA
CE
V
=-10V,IC=-500mA
CE
IC=-150mA, IB=-15mA
I
=-500mA, IB=-50mA
C
IC=-150mA, IB=-15mA
I
=-500mA, IB=-50mA
C
VCE=-20V, IC= -50mA
f=100MHz
=-0.5V -50 nA
EB(OFF)
=-0.5V -50 nA
EB(OFF)
75
100
100
100
50
200 MHz
300
-0.4
-1.6
-1.3
-2.6
V
V
Collector output capacitance C
Collector input capacitance C
Turn-on time t
Delay time t
Rise time t
Turn-off time t
obo
ibo
on
d
r
off
VCB=-10V,IE=0,f=1MHz 8 pF
VEB=-2.0V,IC=0,f=1MHz 30 pF
45 nS
VCC=-30V,IC=-150mA,
I
=-15mA
B1
10 nS
40 nS
100 nS
VCC=-6.0V,IC=-150mA,
Storage time t
Fall time t
s
f
I
B1=IB2
=-15mA
80 nS
30 nS
Document number: BL/SSSTF050 www.galaxycn.com
Rev.A 2
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