BL Galaxy Electrical Production specification
Dual NPN Small Signal Surface Mount Transistor MMDT5551
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
MMDT5401.
z Ultra-small surface mount package.
Pb
Lead-free
APPLICATIONS
z Dual NPN small signal surface mount transistor SOT-363
ORDERING INFORMATION
Type No. Marking Package Code
MMDT5551 K4N SOT-363
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value
Unit
V
V
V
I
P
R
Tj,T
CBO
CEO
EBO
C
D
θJA
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
180 V
160 V
6 V
200 mA
200 mW
625 ℃/W
-55 to+150 ℃
Document number: BL/SSSTE010 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Dual NPN Small Signal Surface Mount Transistor MMDT5551
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
(BR)CBO
(BR)CEO
(BR)EBO
CBO
EBO
FE
CE(sat)
BE(sat)
IC=100μA IE=0 180 - V
IC=1mA IB=0 160 - V
IE=10μA IC=0 6 - V
VCB=120V IE=0 - 50 nA
VEB=4V IC=0
VCE=5V IC=1.0mA 80 -
VCE=5V IC=10mA 80 250
VCE=5V IC=50mA 30 -
IC=10mA IB=1mA
I
=50mA IB=5mA
C
IC=10mA IB=1mA
I
=50mA IB=5mA
C
- 50 nA
-
-
-
-
0.15
0.2
1
1
V
V
Transition frequency f
Output Capacitance C
Noise Figure NF
T
obo
VCE=10V IC=10mA f=100MHz 100 300 MHz
VCB=10V,f=1.0MHz,IE=0 - 6 pF
V
=5V,f=1.0kHz,IC=200μA
CE
R
=1.0kΩ
g
- 8.0 dB
Document number: BL/SSSTE010 www.galaxycn.com
Rev.A 2
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