BL Galaxy Electrical Production specification
Small Signal Surface Mount Transistor MMDT5451
FEATURES
z Complementary pair.
z Ideal for low power amplification
and switching.
z Ultra-Small surface mount package.
z Epitaxial planar die construction.
APPLICATIONS SOT-363
z General switching and amplification.
ORDERING INFORMATION
Type No. Marking Package Code
MMDT5451 KNM SOT-363
Pb
Lead-free
MAXIMUM RATING NPN 5551 Section @ Ta=25℃ unless otherwise specified
Symbol Parameter Value
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θJA
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
180 V
160 V
6 V
200 mA
200 mW
625 ℃/W
-55 to+150 ℃
Unit
MAXIMUM RATING PNP 5401 Section @ Ta=25℃ unless otherwise specified
Symbol Parameter Value
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θJA
Tj,T
stg
Document number: BL/SSSTE029 www.galaxycn.com
Rev.A 1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
-160 V
-150 V
-5 V
-200 mA
200 mW
625 ℃/W
-55 to+150 ℃
Unit
BL Galaxy Electrical Production specification
Small Signal Surface Mount Transistor MMDT5451
ELECTRICAL CHARACTERISTICS NPN 5551 Section @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
Output Capacitance C
(BR)CBO
(BR)CEO
(BR)EBO
CBO
EBO
FE
CE(sat)
BE(sat)
T
obo
Noise Figure NF
IC=100μA IE=0 180 - V
IC=1mA IB=0 160 - V
IE=10μA IC=0 6 - V
VCB=120V IE=0
VCB=120V IE=0，TA=100℃
VEB=4V IC=0
- 50
- 50 nA
nA
uA
VCE=5V IC=1.0mA 80 -
VCE=5V IC=10mA 80 250
-
VCE=5V IC=50mA 30 -
IC=10mA IB=1mA
I
=50mA IB=5mA
C
IC=10mA IB=1mA
I
=50mA IB=5mA
C
-
-
-
0.15
0.2
1
1
V
V
VCE=10V IC=10mA f=100MHz 100 300 MHz
VCB=10V,f=1.0MHz,IE=0 - 6 pF
V
=5V,f=1.0kHz,IC=200μA
CE
R
=1.0kΩ
g
- 8.0 dB
ELECTRICAL CHARACTERISTICS PNP 5401 Section
@ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
(BR)CBO
(BR)CEO
(BR)EBO
CBO
EBO
IC=-100μA IE=0 -160 - V
IC=-1.0mA IB=0 -150 - V
IE=-10μA IC=0 -5 - V
VCB=-120V IE=0
VCB=-120V IE=0 TA=100℃
VEB=-3V IC=0
- -50
- -50 nA
nA
μA
VCE=-5V IC=-1.0mA 50 -
DC current gain h
FE
VCE=-5V IC=-10mA 60 240
-
VCE=-5V IC=-50mA 50 -
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
Output Capacitance C
CE(sat)
BE(sat)
T
obo
IC=-10mA IB=-1.0mA
I
=-50mA IB=-5.0mA
C
IC=-10mA IB=-1.0mA
I
=-50mA IB=-5.0mA
C
-
- -1.0 V
VCE=-10V IC=-10mA f=100MHz 100 300 MHz
VCB=-10V,f=1.0MHz,IE=0 - 6 pF
-0.2
-0.5
V
Noise Figure NF VCE=-5V IC=-200μA f=1.0KHz - 8.0 dB
Document number: BL/SSSTE029 www.galaxycn.com
Rev.A 2
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