BL Galaxy Electrical Production specification
Dual PNP Small Signal Surface Mount Transistor MMDT5401
FEATURES
z Epitaxial planar die construction.
z Complementary NPN type available
MMDT5551.
z Ultra-small surface mount package.
Pb
Lead-free
APPLICATIONS
z For Low power amplification and switching. SOT-363
ORDERING INFORMATION
Type No. Marking Package Code
MMDT5401 K4M SOT-363
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value
Unit
V
V
V
I
P
R
Tj,T
CBO
CEO
EBO
C
D
θJA
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
-160 V
-150 V
-5 V
-200 mA
200 mW
625 ℃/W
-55 to+150 ℃
Document number: BL/SSSTE009 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Dual PNP Small Signal Surface Mount Transistor MMDT5401
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
(BR)CBO
(BR)CEO
(BR)EBO
CBO
EBO
FE
CE(sat)
BE(sat)
IC=-100μA IE=0 -160 - V
IC=-1.0mA IB=0 -150 - V
IE=-10μA IC=0 -5 - V
VCB=-120V IE=0
=-120V IE=0 TA=100℃
V
CB
VEB=-3V IC=0
- -50
- -50 nA
nA
μA
VCE=-5V IC=-1.0mA 50 -
VCE=-5V IC=-10mA 60 240
-
VCE=-5V IC=-50mA 50 -
IC=-10mA IB=-1.0mA
I
=-50mA IB=-5.0mA
C
IC=-10mA IB=-1.0mA
I
=-50mA IB=-5.0mA
C
-
- -1.0 V
-0.2
-0.5
V
Transition frequency f
Output Capacitance C
T
obo
VCE=-10V IC=-10mA f=100MHz 100 300 MHz
VCB=-10V,f=1.0MHz,IE=0 - 6 pF
Noise Figure NF VCE=-5V IC=-200μA f=1.0KHz - 8.0 dB
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTE009 www.galaxycn.com
Rev.A 2
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