BL Galaxy Electrical Production specification
Small Signal Surface Mount Transistor MMDT4413
FEATURES
z Complementary pair.
z Ideal for low power amplification
and switching.
z Ultra-Small surface mount package.
z Expitaxial planar die construction.
APPLICATIONS SOT-363
z General switching and amplification
ORDERING INFORMATION
Type No. Marking Package Code
MMDT4413 K13 SOT-363
Pb
Lead-free
MAXIMUM RATING NPN 4401 Section @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θJA
TJ,T
stg
collector-base voltage 60 V
collector-emitter voltage 40 V
emitter-base voltage 6 V
collector current -continuous 0.2 A
Power dissipation 0.2 W
Thermal Resistance, Junction to Ambient 625
Operating and storage junction temperature
range
-55-150
℃/W
℃
MAXIMUM RATING PNP 4403 Section
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
CBO
CEO
EBO
C
collector-base voltage -40 V
collector-emitter voltage -40 V
emitter-base voltage -5.0 V
collector current -continuous -0.2 A
@ Ta=25℃ unless otherwise specified
P
D
R
θJA
TJ,T
stg
Document number: BL/SSSTE028 www.galaxycn.com
Rev.A 1
Power dissipation 0.2 W
Thermal Resistance, Junction to Ambient 625
Operating and storage junction temperature
range
-55-150
℃/W
℃
BL Galaxy Electrical Production specification
Small Signal Surface Mount Transistor MMDT4413
ELECTRICAL CHARACTERISTICS NPN 4401 Section @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Collector-base breakdown voltage IC=100μA,IE=0 60 V
Collector-emitter breakdown voltage IC=1mA,IB=0 40 V
Emitter-base breakdown voltage IE=100μA,IC=0 6 V
collector cut-off current VCB= 30V IE=0 - 100 nA
collector cut-off current VCE= 30V IE=0 - 100 nA
emitter cut-off current VCE= 5V IC=0 - 100 nA
-
-
-
300
-
DC current gain
=1V,IC= 0.1mA
V
CE
V
=1V,IC=1mA
CE
V
=1V,IC=10mA
CE
V
=1V,IC=150mA
CE
V
=1V,IC=500mA
CE
20
40
80
100
40
IC=150mA,IB =15mA - 0.4 V
collector-emitter saturation voltage
I
=500mA,IB =50mA - 0.75 V
C
IC=150mA,IB =15mA 0.75 0.95 V
base-emitter saturation voltage
IC=500mA, IB =50mA - 1.2 V
C
ob
f
T
t
d
t
r
t
s
t
f
Output capacitance IE =0, VCB =5V; f =1MHz - 6.5 pF
transition frequency IC=20mA,VCE=10V,f=100MHz 250 - MHz
delay time - 15 ns
rise time
storage time - 225 ns
fall time
=30V,VBE=2.0V
V
CC
I
=150mA IB1=IB2=15mA
C
V
=30V,IC=150mA
CC
I
=15mA
B1=IB2
- 20 ns
- 30 ns
Document number: BL/SSSTE028 www.galaxycn.com
Rev.A 2
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