BL Galaxy Electrical Production specification
Dual NPN Small Signal Surface Mount Transistor MMDT4401
FEATURES
z Epitaxial planar die construction.
z Ultra-small surface mount package.
z Ideal for low power amplification and switching.
Pb
Lead-free
APPLICATIONS
z Dual NPN small signal surface mount transistor
SOT-363
ORDERING INFORMATION
Type No. Marking Package Code
MMDT4401 K2X SOT-363
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value
Unit
V
V
V
I
P
R
Tj,T
CBO
CEO
EBO
C
D
θJA
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
60 V
40 V
6 V
600 mA
200 mW
625 ℃/W
-55 to+150 ℃
Document number: BL/SSSTE005 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Dual NPN Small Signal Surface Mount Transistor MMDT4401
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Base cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
(BR)CBO IC
(BR)CEO IC
(BR)EBO
CEX
BL
FE
CE(sat)
BE(sat)
=100μA IE=0 60 - V
=1mA IB=0 40 - V
IE=100μA IC=0 6 - V
VCE=35V,V
VCE=35V,V
VCE=1V IC=0.1mA
V
=1V IC=1.0mA
CE
V
=1V IC=10mA
CE
V
=1V IC=150mA
CE
V
=2V IC=500mA
CE
IC=150mA IB=15mA
I
=500mA IB=50mA
C
IC=150mA IB=15mA
I
=500mA IB=50mA
C
=0.4V - 0.1 μA
EB(OFF)
EB(OFF)
=0.4V
- 0.1 μA
20
40
80
100
40
-
0.75 - 0.95
-
-
-
300
-
0.4
0.75
1.2
-
V
V
Transition frequency f
Output Capacitance C
Input Capacitance C
Delay time t
Rise time t
Storage time t
Fall time t
T
obo
ibo
d
r
s
f
VCE=10V IC=20mA f=1MHz 250 MHz
VCB=5V,f=1.0MHz,IE=0 - 6.5 pF
VEB=0.5V,f=1.0MHz,IC=0 - 30 pF
VCC=30V, V
I
=150mA , IB1= 15mA
C
BE(off)
=2V
VCC=30V, IC=150mA
I
=15mA
B1=IB2
15 ns
20 ns
225 ns
30 ns
Document number: BL/SSSTE005 www.galaxycn.com
Rev.A 2
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