BL Galaxy Electrical Production specification
Small Signal Surface Mount Transistor MMDT3946
FEATURES
z Complementary pair.
z One 3904-Type NPN
One 3906-Type PNP
z Ideal for low power amplification and switching.
z Ultra-Small surface mount package
z Expitaxial planar die construction.
SOT-363
APPLICATIONS
z General switching and amplification
ORDERING INFORMATION
Type No. Marking Package Code
MMDT3946 K46 SOT-363
Pb
Lead-free
MAXIMUM RATING NPN 3904 Section @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
R
CBO
CEO
EBO
C
D
θJA
collector-base voltage 60 V
collector-emitter voltage 40 V
emitter-base voltage 6 V
collector current -continuous 0.2 A
Power dissipation 0.2 W
Thermal Resistance, Junction to Ambient 625
℃/W
MAXIMUM RATING PNP 3906 Section @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER VALUE UNIT
V
V
V
CBO
CEO
EBO
collector-base voltage -40 V
collector-emitter voltage -40 V
emitter-base voltage -5.0 V
I
C
P
D
R
θJA
Document number: BL/SSSTE004 www.galaxycn.com
Rev.A 1
collector current -continuous -0.2 A
Power dissipation 0.2 W
Thermal Resistance, Junction to Ambient 625
℃/W
BL Galaxy Electrical Production specification
Small Signal Surface Mount Transistor MMDT3946
ELECTRICAL CHARACTERISTICS NPN 3904 Section @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
h
FE
V
CE(sat)
Collector-base breakdown voltage IC=10μA,IE=0 60 V
Collector-emitter breakdown voltage IC=1mA,IB=0 40 V
Emitter-base breakdown voltage IE=10μA,IC=0 5 V
collector cut-off current VCE= 30V V
Base cut-off current VCE= 30V V
=1V,IC= 0.1mA
V
CE
V
=1V,IC=1mA
CE
DC current gain
V
=1V,IC=10mA
CE
V
=1V,IC=50mA
CE
V
=1V,IC=100mA
CE
= 3.0V - 50 nA
EB(OFF)
= 3.0V - 50 nA
EB(OFF)
40
70
100
60
30
-
-
300
-
-
IC=10mA,IB =1.0mA - 200 mV
collector-emitter saturation voltage
=50mA,IB =5mA - 300 mV
I
C
IC=10mA,IB =1mA 650 850 mV
V
BE(sat)
C
obo
C
Input capacitance IC=0, VEB =0.5V; f =1MHz - 8 pF
obi
f
T
NF noise figure
t
d
t
r
t
s
t
f
base-emitter saturation voltage
=50mA, IB =5mA - 950 mV
I
C
Output capacitance IE =0, VCB =5V; f =1MHz - 4 pF
transition frequency IC=20mA,VCE=20V,f=100MHz 300 - MHz
I
=0.1mA,VCE =5V,RS=1kΩ,
C
f = 1kHz
delay time - 35 ns
rise time
storage time - 200 ns
fall time
V
=3V,V
CC
I
=10mA,IB1=IB2=1mA
C
V
=3V,IC=10mA
CC
I
=1mA
B1=IB2
BE(off)
=-0.5V
- 5 dB
- 35 ns
- 50 ns
Document number: BL/SSSTE004 www.galaxycn.com
Rev.A 2
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