BL Galaxy Electrical Production specification
Dual PNP Small Signal Surface Mount Transistor MMDT3906
FEATURES
z Epitaxial planar die construction.
z Ideal for low power amplification and
switching.
z Ultra-small surface mount package
z Also available in lead free version.
APPLICATIONS SOT-363
z General switching and amplification
ORDERING INFORMATION
Type No. Marking Package Code
MMDT3906 K3N SOT-363
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
R
T
T
CBO
CEO
EBO
C
tot
θJA
stg
j
collector-base voltage -40 V
collector-emitter voltage -40 V
emitter-base voltage -5 V
collector current -continuous -0.2 A
total power dissipation -0.2 W
Thermal resistance, junction to ambient 625 °C/W
storage temperature 150 °C
junction temperature -55-150 °C
Document number: BL/SSSTE003 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Dual PNP Small Signal Surface Mount Transistor MMDT3906
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
h
FE
V
CE(sat)
V
BE(sat)
C
obo
Collector-base breakdown voltage IC=-10μA,IE=0 -40 V
Collector-emitter breakdown
voltage
I
=-1mA,IB=0 -40 V
C
Emitter-base breakdown voltage IE=-10μA,IC=0 -5 V
collector cut-off current VCE=-30V,V
Base cut-off current VCE=-30V,V
=-1V,IC= -0.1mA
V
CE
V
=-1V,IC =-1mA
CE
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
V
=-1V,IC =-10mA
CE
V
=-1V,IC =-50mA
CE
V
=-1V,IC =-100mA
CE
IC =-10mA,IB =-1mA - -250 mV
=-50mA,IB =-5mA - -400 mV
I
C
IC =-10mA,IB =-1mA -650 -850 mV
=-50mA, IB =-5mA - -950 mV
I
C
=-3.0V - -0.05 μA
EB(OFF)
=-3.0V - -0.05 μA
EB(OFF)
60
80
100
60
30
-
-
300
-
-
Output capacitance IE =0,VCB=-5V; f =1MHz - 4.5 pF
C
ibo
f
T
Input capacitance IC=0, VEB =-0.5V; f =1MHz - 10 pF
transition frequency IC=-1.0mA,VCE=-10V,f=1.0KHz 250 - MHz
NF noise figure IC=-0.1mA,VCE=-20V,f=100MHz - 4 dB
t
d
t
r
t
s
t
f
delay time - 35 ns
rise time
storage time - 225 ns
fall time
=-3V,V
V
CC
I
=-IB2=-1mA
B1
V
=-3V,IC=-10mA
CC
I
=-IB2=-1mA
B1
=0.5V IC=-10mA
BE(off)
- 35 ns
- 75 ns
Document number: BL/SSSTE003 www.galaxycn.com
Rev.A 2
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