BL Galaxy Electrical Production specification
Dual NPN Small Signal Surface Mount Transistor MMDT3904
FEATURES
z Epitaxial planar die construction.
z Ideal for low power amplification and
switching.
z Ultra-small surface mount package
z Also available in lead free version.
APPLICATIONS
z General switching and amplification SOT-363
ORDERING INFORMATION
Type No. Marking Package Code
MMDT3904 K6N SOT-363
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
R
T
T
CBO
CEO
EBO
C
tot
θJA
stg
j
collector-base voltage 60 V
collector-emitter voltage 40 V
emitter-base voltage 6 V
collector current -continuous 0.2 A
total power dissipation 0.2 W
Thermal Resistance, Junction to Ambient
storage temperature 150 °C
junction temperature -55-150 °C
625 ℃/W
Document number: BL/SSSTE002 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Dual NPN Small Signal Surface Mount Transistor MMDT3904
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
h
FE
V
CE(sat)
V
BE(sat)
C
obo
C
ibo
f
T
NF noise figure
t
d
t
r
t
s
t
f
Collector-base breakdown voltage IC=10μA,IE=0 60 V
Collector-emitter breakdown voltage IC=1mA,IB=0 40 V
Emitter-base breakdown voltage IE=10μA,IC=0 5 V
collector cut-off current VCE=30V,V
Base cut-off current VCE=30V,V
=1V,IC= 0.1mA
V
CE
V
=1V,IC =1mA
CE
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
V
=1V,IC =10mA
CE
V
=1V,IC =50mA
CE
V
=1V,IC =100mA
CE
IC =10mA,IB =1mA - 200 mV
=50mA,IB =5mA - 300 mV
I
C
IC =10mA,IB =1mA 650 850 mV
=50mA, IB =5mA - 950 mV
I
C
=3.0V - 50 nA
EB(OFF)
=3.0V - 50 nA
EB(OFF)
40
70
100
60
30
-
-
300
-
-
Output capacitance IE =0, VCB =5V, f =1MHz - 4 pF
Input capacitance IC=0, VEB =0.5V, f =1MHz - 8 pF
transition frequency IC=10mA,VCE=20V,f=100MHz 300 - MHz
I
=0.1mA,VCE =5V,RS=1kΩ,
C
f = 1kHz
delay time - 35 ns
rise time
storage time - 200 ns
fall time
=3V,V
V
CC
I
=10mA IB1=1mA
C
V
CC
I
B1=IB2
BE(off)
=3V,IC=10mA
=1mA
=-0.5V
- 5 dB
- 35 ns
- 50 ns
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTE002 www.galaxycn.com
Rev.A 2
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