BL Galaxy Electrical Production specification
Dual NPN Small Signal Surface Mount Transistor MMDT2222A
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
MMDT2907A.
z Ultra-small surface mount package.
Pb
Lead-free
APPLICATIONS
z Dual NPN small signal surface mount transistor SOT-363
ORDERING INFORMATION
Type No. Marking Package Code
MMDT2222A K1P SOT-363
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value
Unit
V
V
V
I
P
R
Tj,T
CBO
CEO
EBO
C
D
θJA
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
75 V
40 V
6 V
600 mA
200 mW
625 ℃/W
-55to+150 ℃
Document number: BL/SSSTE001 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Dual NPN Small Signal Surface Mount Transistor MMDT2222A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Collector cut-off current I
Emitter cut-off current I
Base Cut-off Current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
Output Capacitance C
Input Capacitance C
(BR)CBO
(BR)CEO
(BR)EBO
CBO
CEX
EBO
BL
FE
CE(sat)
BE(sat)
T
obo
ibo
Noise Figure NF
Delay time t
Rise time t
Storage time t
Fall time t
d
r
s
f
IC=10μA IE=0 75 - V
IC=10mA IB=0 40 - V
IE=10μA IC=0 6 - V
VCB=60V IE=0
VCB=60V IE=0 TA=150℃
VCE=60V I
VEB=3V IC=0
VCE=60V I
=3.0V - 10 nA
EB(off)
=3.0V - 20 nA
EB(off)
- 10
- 10 nA
nA
μA
VCE=10V IC=100μA 35 -
VCE=10V IC=1.0mA 50 -
VCE=10V IC=10mA 75 -
VCE=10V IC=150mA 100 300
-
VCE=10V IC=500mA 40 -
VCE=10V IC=10mA TA=-55℃
50 -
VCE=1.0V IC=150mA 35 -
IC=150mA IB=15mA
I
=500mA IB=50mA
C
IC=150mA IB=15mA
I
=500mA IB=50mA
C
0.3
-
1.0
0.6 - 1.2
2.0
V
V
VCE=20V IC=20mA f=100MHz 300 MHz
VCB=10V,f=1.0MHz,IE=0 - 8 pF
VEB=0.5V,f=1.0MHz,IC=0 - 25 pF
V
=10V,f=1.0kHz,IC=100μA
CE
R
=1.0kΩ
S
Vcc=30V, V
I
=150mA , IB1= 15mA
C
BE(off)
=-0.5V
VCC=30V, IC=150mA
I
=-IB2=15mA
B1
- 4.0 dB
10 ns
25 ns
225 ns
60 ns
Document number: BL/SSSTE001 www.galaxycn.com
Rev.A 2
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