BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor MMBTH10
FEATURES
z High transition frequency.
z Power dissipation.(P
=350mW)
C
APPLICATIONS
z VHF/UHF Transistor.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBTH10 3EM SOT-23
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
30 V
25 V
3 V
50 mA
350 mW
-55~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
IC=0.1mA,IB=0 25 V
(BR)CEO
IE=10μA,IC=0 3
(BR)EBO
=100μA,IE=0 30 V
VCB=25V,IE=0 0.1 μA
VEB=2V,IC=0 0.1 μA
VCE=10V,IC=4.0mA 60
MAX UNIT
V
Collector-emitter saturation voltage
Base-emitter on voltage
Transition frequency
Document number: BL/SSSTC125 www.galaxycn.com
Rev.A 1
V
CE(sat)
V
BE(on)
f
T
IC=4.0mA, IB= 0.4mA
=4.0mA, VCE=10V
I
C
VCE=10V, IC= 4.0mA
f=100MHz
0.5 V
0.95 V
650 MHz
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor MMBTH10
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC125 www.galaxycn.com
Rev.A 2
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