BL Galaxy Electrical Production specification
PNP High Voltage Amplifier MMBTA92
FEATURES
z Epitaxial planar die construction.
z Complementary NPN type available
(MMBTA42).
z Ideal for medium power amplification and switching.
APPLICATIONS
z High voltage driver applications.
ORDERING INFORMATION
Type No. Marking Package Code
MMBTA92 2D SOT-23
Pb
Lead-free
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value UNIT
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj ,T
stg
collector-base voltage -300 V
collector-emitter voltage -300 V
emitter-base voltage -5 V
collector current (DC) -0.1 A
Collector dissipation 0.35 W
junction and storage temperature -55-150 °C
ELECTRICAL CHARACTERISTICS
Document number: BL/SSSTC077 www.galaxycn.com
Rev.A 1
@ Ta=25℃ unless otherwise specified
BL Galaxy Electrical Production specification
PNP High Voltage Amplifier MMBTA92
Symbol Parameter Test conditions MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
ob
f
T
Collector-base breakdown voltage IC=-100μA,IE=0 -300
Collector-emitter breakdown voltage IC=-1mA,IB=0 -300
Emitter-base breakdown voltage IE=-100μA,IC=0 -5
collector cut-off current IE = 0; V
emitter cut-off current IC = 0; V
= -10V; IC= -1mA
V
CE
DC current gain
V
= -10V;IC= -10mA
CE
V
= -10V;IC= -50 mA
CE
= -200V - -0.1 μA
CB
= -3V - -0.1 μA
EB
25
40
25
collector-emitter saturation voltage IC = -20mA; IB = -2mA - -0.5 V
base-emitter saturation voltage IC = -20mA; IB = -2mA - -0.9 V
Collector output capacitance VCB=-20V,f=1.0MHz 6.0 pF
I
= -10mA; VCE = -20V;
transition frequency
C
f = 100MHz
50 - MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC077 www.galaxycn.com
Rev.A 2
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