BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBTA63/MMBTA64
FEATURES
z Epitaxial planar die construction.
z Complementary NPN type available
(MMBTA13/MMBTA14).
z High current gain.
APPLICATIONS
z Ideal for medium power amplification and switching
ORDERING INFORMATION
Type No. Marking Package Code
MMBTA63 2U SOT-23
MMBTA64 2V SOT-23
Pb
Lead-free
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value UNIT
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
Tj ,T
stg
collector-base voltage MMBTA63
MMBTA64
collector-emitter voltage MMBTA63
MMBTA64
emitter-base voltage -10 V
collector current (DC) -0.3 A
Collector dissipation 0.3 W
Thermal Resistance, Junction to Ambient 417 °C/W
junction and storage temperature -55-150 °C
-30
-30
-30
-30
V
V
Document number: BL/SSSTC124 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBTA63/MMBTA64
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter Test conditions MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
Collector-base breakdown voltage
MMBTA63
I
=-100μA,IE=0
C
MMBTA64
Collector-emitter breakdown voltage
MMBTA63
IC=-0.1mA,IB=0
MMBTA64
Emitter-base breakdown voltage IE=-100μA,IC=0 -10 - V
collector cut-off current IE = 0; V
collector cut-off current IE = 0; V
Emitter cut-off current IC= 0; V
DC current gain MMBTA63
MMBTA64
MMBTA63
MMBTA64
VCE = -5V; IC= -10mA
V
= -5V;IC = -10mA
CE
V
= -5V;IC = -100mA
CE
V
= -5V;IC =-100mA
CE
= -30V - -0.1 μA
CB
= -10V - -0.1 μA
CE
= -10V - -0.1 μA
EB
-30
-30
-30
-30
5000
10000
10000
20000
- V
- V
-
V
CE(sat)
V
BE(on)
f
T
collector-emitter saturation voltage IC = -100mA; IB =-0.1mA - -1.5 V
base-emitter on voltage IC = -100mA; VCE=-5.0V - -2.0 V
transition frequency
TYPICAL CHARACTERISTICS
I
=-10mA; VCE =-5.0V;
C
f =100MHz
125 - MHz
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC124 www.galaxycn.com
Rev.A 2
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