BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBTA55/A56
FEATURES
z Epitaxial planar die construction.
z Complementary NPN types available
(MMBTA05/MMBTA06)
APPLICATIONS
z Ideal for medium NPN amplification and switching.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBTA55 2H SOT-23
MMBTA56 2GM SOT-23
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter MMBTA55 MMBTA56 UNIT
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
Tj ,T
stg
collector-base voltage -60 -80 V
collector-emitter voltage -60 -80 V
emitter-base voltage -4 V
collector current (DC) -0.5 A
Collector dissipation 0.3 W
Thermal Resistance, Junction to Ambient 417 °C/W
junction and storage temperature -55-150 °C
Document number: BL/SSSTC123 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBTA55/A56
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter Test conditions MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
Collector-base breakdown voltage
MMBTA55
MMBTA56
Collector-emitter breakdown voltage
MMBTA55
MMBTA56
I
=-100μA,IE=0
C
IC=-1.0mA,IB=0
-60
-80
-60
-80
V
V
V
I
CBO
I
CEO
h
FE
V
V
f
T
Emitter-base breakdown voltage IE=-100μA,IC=0 -4 V
(BR)EBO
CE(sat)
BE(sat)
collector cut-off current MMBTA55
MMBTA56
collector cut-off current MMBTA55
MMBTA56
DC current gain
collector-emitter saturation voltage IC = -100mA; IB = -10mA - -0.25 V
base-emitter saturation voltage IC = -100mA; VCE = -1.0V - -1.2 V
transition frequency
IE = 0; V
I
= 0; V
E
IB = 0; V
I
= 0; V
B
V
= -1V;IC = -10mA
CE
V
= -1V;IC = -100mA
CE
I
= -100mA; VCE = -1V;
C
= -60V
CB
= -80V
CB
= -60V
CB
= -80V
CB
f = 100MHz
- -0.1 μA
- -0.1 μA
100
100
-
-
50 - MHz
PACKAGE OUTLINE
Plastic surface mounted package SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
SOT-23
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm
Document number: BL/SSSTC123 www.galaxycn.com
Rev.A 2
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