BL Galaxy Electrical Production specification
NPN High Voltage Amplifier MMBTA42
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
(MMBTA92).
z Ideal for medium power amplification and switching.
APPLICATIONS
z NPN High voltage amplifier.
ORDERING INFORMATION
Type No. Marking Package Code
MMBTA42 1D SOT-23
Pb
Lead-free
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value UNIT
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj ,T
stg
collector-base voltage 300 V
collector-emitter voltage 300 V
emitter-base voltage 6 V
collector current (DC) 0.2 A
Collector dissipation 0.35 W
junction and storage temperature -55-150 °C
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter Test conditions MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
ob
f
T
Collector-base breakdown voltage IC=100μA,IE=0 300 - V
Collector-emitter breakdown voltage IC=1.0mA,IB=0 300 - V
Emitter-base breakdown voltage IE=100μA,IC=0 6 - V
collector cut-off current IE = 0; V
emitter cut-off current IC = 0; V
=10V; IC=1mA
V
CE
DC current gain
V
=10V;IC =10mA
CE
V
=10V;IC =30mA
CE
= 200V - 0.1 μA
CB
= 6V - 0.1 μA
EB
25
40
40
-
-
-
collector-emitter saturation voltage IC =20mA; IB =2mA - 0.5 V
base-emitter saturation voltage IC =20mA; IB=2mA - 0.9 V
Collector output capacitance VCB=20V,IE=0;f=1.0MHz 3.0 pF
I
=10mA; VCE =20V
transition frequency
C
f=100MHz
50 - MHz
Document number: BL/SSSTC076 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN High Voltage Amplifier MMBTA42
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC076 www.galaxycn.com
Rev.A 2
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