BL Galaxy Electrical Production specification
NPN General Purpose Transistor MMBTA13/MMBTA14
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
(MMBTA63/MMBTA64).
z High current gain.
APPLICATIONS
z Ideal for medium power amplification and switching
ORDERING INFORMATION
Type No. Marking Package Code
MMBTA13 K2D SOT-23
MMBTA14 K3D SOT-23
Pb
Lead-free
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value UNIT
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
Tj ,T
stg
collector-base voltage MMBTA13
MMBTA14
collector-emitter voltage MMBTA13
MMBTA14
emitter-base voltage 10 V
collector current (DC) 0.3 A
Collector dissipation 0.3 W
Thermal Resistance, Junction to Ambient 417 °C/W
junction and storage temperature -55-150 °C
30
30
30
30
V
V
Document number: BL/SSSTC121 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN General Purpose Transistor MMBTA13/MMBTA14
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter Test conditions MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE
Collector-base breakdown voltage
MMBTA13
I
=100μA,IE=0
C
MMBTA14
Collector-emitter breakdown voltage
MMBTA13
IC=0.1mA,IB=0
MMBTA14
Emitter-base breakdown voltage IE=100μA,IC=0 10 - V
collector cut-off current IE = 0; V
collector cut-off current IE = 0; V
DC current gain MMBTA13
MMBTA14
MMBTA13
MMBTA14
VCE = 5V; IC= 10mA
V
= 5V;IC = 10mA
CE
V
= 5V;IC = 100mA
CE
V
= 5V;IC = 100mA
CE
= 30V - 0.1 μA
CB
= 10V - 0.1 μA
CE
30
30
30
30
5000
10000
10000
20000
- V
- V
-
V
CE(sat)
V
BE
f
T
collector-emitter saturation voltage IC = 100mA; IB = 0.1mA - 1.5 V
Base-emitter on voltage IC=100mA,VCE=5V
I
= 10mA; VCE = 5.0V;
transition frequency
C
f = 100MHz
- 2.0 V
125 - MHz
PACKAGE OUTLINE
Plastic surface mounted package SOT-23
A
E
Dim Min Max
A 2.85 2.95
K
D
G
B
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
J
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
H
C
J 0.1Typical
K 2.35 2.45
SOT-23
All Dimensions in mm
Document number: BL/SSSTC121 www.galaxycn.com
Rev.A 2
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