BL Galaxy Electrical Production specification
NPN General Purpose Transistor MMBTA05/MMBTA06
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
(MMBTA55/MMBTA56).
z Also available in lead free version.
APPLICATIONS
z Ideal for medium power amplification and switching
ORDERING INFORMATION
Type No. Marking Package Code
MMBTA05 1H SOT-23
MMBTA06 1GM SOT-23
Pb
Lead-free
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value UNIT
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
Tj ,T
stg
collector-base voltage MMBTA05
MMBTA06
collector-emitter voltage MMBTA05
MMBTA06
emitter-base voltage 4 V
collector current (DC) 0.5 A
Collector dissipation 0.35 W
Thermal Resistance, Junction to Ambient 357 °C/W
junction and storage temperature -55-150 °C
60
80
60
80
V
V
Document number: BL/SSSTC119 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN General Purpose Transistor MMBTA05/MMBTA06
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter Test conditions MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
Collector-base breakdown voltage
MMBTA05
I
=100μA,IE=0
C
MMBTA06
Collector-emitter breakdown voltage
MMBTA05
IC=1.0mA,IB=0
MMBTA06
Emitter-base breakdown voltage IE=100μA,IC=0 4 V
collector cut-off current MMBTA05
MMBTA06
collector cut-off current MMBTA05
MMBTA06
DC current gain
IE = 0; V
I
= 0; V
E
IE = 0; V
I
= 0; V
E
V
= 1V; IC= 10mA
CE
V
= 1V;IC = 100mA
CE
CB
CB
CE
CE
= 60V
= 80V
= 60V
= 80V
collector-emitter saturation voltage IC = 100mA; IB = 10mA - 0.25 V
I
= 10mA; VCE = 2.0V;
transition frequency
C
f = 100MHz
60
V
80
60
V
80
- 0.1 μA
- 0.1 μA
100 -
100 - MHz
PACKAGE OUTLINE
Plastic surface mounted package SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
SOT-23
All Dimensions in mm
Document number: BL/SSSTC119 www.galaxycn.com
Rev.A 2
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