BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor FMMT591
FEATURES
Pb
z High saturation voltage.
z Complementary To FMMT491.
z Excellent H
Linearity.
FE
APPLICATIONS
z Switching appilication.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
FMMT591 591 SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
Lead-free
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-80 V
-60 V
-5 V
-1000 mA
500 mW
-55~150 ℃
Document number: BL/SSSTC053 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor FMMT591
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
V
IC=-10mA,IB=0 -60 V
(BR)CEO
IE=-100μA,IC=0 -5
(BR)EBO
CE(sat)
BE(sat)
=-100μA,IE=0 -80 V
VCB=-60V,IE=0 -0.1 μA
VEB=-4V,IC=0 -0.1 μA
VCE=-5V,IC=-1mA
=-5V,IC=-500mA
V
CE
=-5V,IC=-1A
V
CE
=-5V,IC=-2A
V
CE
100
100
80
15
IC=-500mA, IB=-50mA
I
=-1A, IB= -100mA
C
=-1A, IB= -100mA
I
C
-1.2 V
TYP MAX UNIT
V
300
-0.3
V
-0.6
Base-emitter voltage
Transition frequency
Collector output capacitance
V
BE
VCE=-5V,IC=-1A
-1 V
VCE=-10V, IC= -50mA
f
T
C
ob
f=100MHz
VCB=-10V,IE=0,f=1MHz
150 MHz
10 pF
Document number: BL/SSSTC053 www.galaxycn.com
Rev.A 2
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