BL Galaxy Electrical Production specification
NPN General Purpose Transistor MMBT5551
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
(MMBT5401).
z Also available in lead free version.
APPLICATIONS
z Ideal for medium power amplification and switching
ORDERING INFORMATION
Type No. Marking Package Code
MMBT5551 G1 SOT-23
Pb
Lead-free
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value UNIT
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
Tj ,T
stg
collector-base voltage 180 V
collector-emitter voltage 160 V
emitter-base voltage 6 V
collector current (DC) 0.6 A
Collector dissipation 0.35 W
Thermal resistance,Junction to ambient 357 °C/W
junction and storage temperature -55-150 °C
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC065 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN General Purpose Transistor MMBT5551
Symbol Parameter Test conditions MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
obo
Collector-base breakdown voltage IC=100μA,IE=0 180
Collector-emitter breakdown voltage IC=0.1mA,IB=0 160
Emitter-base breakdown voltage IE=10μA,IC=0 6
collector cut-off current IE = 0; V
emitter cut-off current IC = 0; V
= 5V; IC= 1mA
V
CE
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
transition frequency
Output capacitance
V
= 5V;IC = 10mA
CE
V
= 5V;IC = 50mA
CE
I
= 10mA; IB=1mA
C
I
= 50mA; IB = 5mA
C
I
=10mA; IB=1mA
C
I
=50mA; IB=5mA
C
I
=10mA; VCB=10V;
C
f=1.0MHz
I
=10mA; VCE =10V;
E
f=100MHz
= 120V - 50 nA
CB
= 4V - 50 nA
EB
80
80
30
-
-
-
250
-
0.15
0.2
1
1
100 300 MHz
6.0 MHz
V
V
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC065 www.galaxycn.com
Rev.A 2
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