BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBT4403
FEATURES
z Epitaxial planar die construction.
z Complementary NPN type available
(MMBT4401).
z Also available in lead free version.
z Ideal for medium power amplification and switching.
APPLICATIONS
z Ideal for medium power amplification and switching SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBT4403 2T SOT-23
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value UNIT
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj ,T
stg
collector-base voltage -40 V
collector-emitter voltage -40 V
emitter-base voltage -5 V
collector current (DC) -0.6 A
Collector dissipation 0.35 W
junction and storage temperature -55-150 °C
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC074 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBT4403
Symbol Parameter Test conditions MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
collector cut-off current VCE=-35V,VEB=-0.4V -0.1 μA
CEX
I
BL
h
FE
V
CE(sat)
V
BE(sat)
f
T
Collector-base breakdown voltage IC=-100μA,IE=0 -40
Collector-emitter breakdown voltage IC=-1mA,IB=0 -40
Emitter-base breakdown voltage IE=-100μA,IC=0 -5
Base cut-off current VCE=-35V,VEB=-0.4V -0.1 μA
30
60
100
100
300
20
-
-0.75
-0.4
-0.75
-0.95
-1.3
200 - MHz
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
transition frequency
= -1V; IC= -0.1mA
V
CE
V
= -1V;IC = -1mA
CE
V
= -1V;IC = -10mA
CE
V
= -2V;IC = -150mA
CE
V
= -2V;IC = -500mA
CE
I
= -150mA ,IB = -15mA
C
I
= -500mA ,IB = -50mA
C
I
= -150mA; IB = -15mA
C
I
= -500mA; IB = -50mA
C
I
= -20mA; VCE= -10V;
C
f =100MHz
V
V
TYPICAL CHARACTERISTICS
Document number: BL/SSSTC074 www.galaxycn.com
Rev.A 2
@ Ta=25℃ unless otherwise specified
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