BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor MMBT4401
FEATURES
Pb
z Epitaxial planar die construction.
z Complementary PNP type available:
MMBT4403.
z Ideal for medium power amplification and switching.
APPLICATIONS
z General purpose application, switching application. SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBT4401 2X SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Lead-free
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction and Storage Temperature
60 V
40 V
6 V
600 mA
350 mW
-55~150 ℃
Document number: BL/SSSTC073 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor MMBT4401
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Base cut-off current
DC current gain
V
(BR)CBO IC
V
I
CEX
I
BL
h
FE
IC=1mA,IB=0 40 V
(BR)CEO
IE=100μA,IC=0 6
(BR)EBO
V
=100μA,IE=0 60 V
=35V,VEB=0.4V 0.1 μA
CE
VCE=35V,VEB=0.4V 0.1 μA
VCE=1V,IC=0.1mA
=1V,IC=1.0mA
V
CE
=1V,IC=10mA
V
CE
20
40
80
TYP MAX UNIT
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
f
T
C
ob
=1V,IC=150mA
V
CE
=2V,IC=500mA
V
CE
IC=150mA, IB=15mA
I
=500mA, IB=50mA
C
IC=150mA, IB=15mA
I
=500mA, IB=50mA
C
VCE=10V, IC= 20mA
f=100MHz
VCB=5V,IE=0,f=1MHz
100
40
300
0.4
V
0.75
0.75 0.95
V
1.2
250 MHz
6.5 pF
Document number: BL/SSSTC073 www.galaxycn.com
Rev.A 2
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