BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBT3906T
FEATURES
z Epitaxial planar die construction.
z Complementary NPN type available
(MMBT3904T).
z Low Current (Max:-200mA).
z Low Voltage(Max:-40V).
APPLICATIONS
z Ideal for medium power amplification and switching SOT-523
ORDERING INFORMATION
Type No. Marking Package Code
MMBT3906T 3N SOT-523
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER MMBT3906T UNIT
V
V
V
I
P
R
T
T
CBO
CEO
EBO
C
d
θJA
stg
j
collector-base voltage -40 V
collector-emitter voltage -40 V
emitter-base voltage -5 V
collector current (DC) -200 mA
Power dissipation 150 mW
Thermal resistance, junction to Ambient 833 °C/W
storage temperature range -55 to +150 °C
junction temperature 150 °C
Document number: BL/SSSTH015 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBT3906T
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)BEO
I
CBO
I
EBO
I
CEX
I
BL
h
FE
V
CE（sat）
V
BE（sat）
Collector-base breakown voltage IC=-10μA,IE=0 -40
Collector- emitter breakown voltage IC=-1.0mA,IB=0 -40
Emitter-base breakown voltage IE=-10μA,IC=0 -5
Collector cut-off current IE=0,VCB=-30V -50 nA
Emitter cut-off current IC=0,VEB=-5V -50 nA
collector cut-off current VCE=-30V,V
Base cut-off current VCE=-30V, V
=-1V,IC=-0.1mA
V
CE
V
=-1V,IC=-1mA
CE
DC current gain
V
=-1V,IC=-10mA
CE
V
=-1V,IC=-50mA
CE
V
=-1V,IC=-100mA
CE
=-3.0V -50 nA
EB(OFF)
=-3.0V -50 nA
EB(OFF)
60
80
100
300
60
30
IC=-10mA,IB=-1mA -250 mV
collector-emitter saturation voltage
I
=-50mA,IB=-5mA -400 mV
C
IC=-10mA; IB=-1mA -650 -850 mV
base-emitter saturation voltage
=-50mA; IB=-5mA -950 mV
I
C
C
obo
C
ibo
f
T
t
d
t
r
t
s
t
f
Output capacitance IE=0,VCB=-5V,f=1MHz 4.5 pF
Input capacitance IC=0,VBE=-0.5V,f =1MHz 10 pF
transition frequency IC=-10mA,VCE =-20V,f=100MHz 250 MHz
delay time - 35 ns
rise time
storage time - 225 ns
fall time
=-10mA,IB1=-1mA,V
I
C
V
=-3.0V
CC
VCC=-3.0V, IC=-10mA
I
=-1mA
B1=IB2
BE(off)
=-0.5V
- 35 ns
- 75 ns
Document number: BL/SSSTH015 www.galaxycn.com
Rev.A 2
Loading...