BL Galaxy Electrical Production specification
PNP General Purpose Amplifier MMBT2907A
FEATURES
z Epitaxial planar die construction.
z Complementary NPN type available
MMBT2222A.
z Ideal for medium power amplification and switching.
APPLICATIONS
z This device is designed as a general purpose amplifier
and switching. SOT-23
z The useful dynamic range extends to 600mA as a switch
and to 100MHz as a amplifier.
Pb
Lead-free
ORDERING INFORMATION
Type No. Marking Package Code
MMBT2907A 2F SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value
V
V
V
I
CBO
CEO
EBO
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
-60 V
-60 V
-5 V
-600 mA
Unit
P
D
R
θjA
Tj,T
stg
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
350 mW
357 ℃/W
-55 to+150 ℃
Document number: BL/SSSTC072 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP General Purpose Amplifier MMBT2907A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Collector cut-off current I
Base cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
(BR)CBO IC
(BR)CEO IC
(BR)EBO IE
CBO
CEX
B
FE
CE(sat)
BE(sat)
=-10μA IE=0 -60 V
=-10mA IB=0 -60 V
=-10μA IC=0 -5 μV
VCB=-50V IE=0
VCB=-50V IE=0 TA=150℃
VCE=-30V,V
VCE=-30V,V
=-0.5V -50 nA
EB(OFF)
=-0.5V
EB(OFF)
VCE=-10V IC=-100μA
V
=-10V IC=-1mA
CE
V
=-10V IC=-10mA
CE
V
=-10V IC=-150mA
CE
V
=-10V IC=-500mA
CE
IC=-150mA IB=-15mA
I
=-500mA IB=-50mA
C
IC=-150mA IB=-15mA
I
=-500mA IB=-50mA
C
-50 nA
75
100
100
100
50
-20
-20
-
-
-
300
-
-0.4
-1.6
-1.3
-2.6
nA
μA
V
V
Transition frequency f
Output Capacitance C
Input Capacitance C
Delay time t
Rise time t
Storage time t
Fall time t
T
d
r
s
f
obo
ibo
VCE=-20V IC=-50mA
f=100MHz
200 MHz
VCB=-10V f=100kHz IE=0 - 8.0 pF
VEB=-2V f=100kHz IC=0 - 30 pF
VCE=-30V, IC=-150mA,
I
=-15mA
B1
VCE=-6V, IC=-150mA
I
=-IB2=-15mA
B1
10 ns
40 ns
80 ns
30 ns
Document number: BL/SSSTC072 www.galaxycn.com
Rev.A 2
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