BL Galaxy Electrical Production specification
PNP General Purpose Amplifier MMBT2907
FEATURES
z Epitaxial planar die construction.
z Ideal for medium power amplification
and switching.
APPLICATIONS
z This device is designed as a general purpose amplifier
and switching.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBT2907 M2B SOT-23
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θJA
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Thermal resistance,Junction to ambient
Junction and Storage Temperature
-60 V
-40 V
-5 V
-600 mA
350 mW
357 ℃/W
-55 to+150 ℃
Unit
Document number: BL/SSSTC090 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP General Purpose Amplifier MMBT2907
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Collector cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Output capacitance C
Input capacitance C
Transition frequency f
(BR)CBO IC
(BR)CEO IC
(BR)EBO IE
CBO
CEX
FE
CE(sat)
BE(sat)
ob
ib
T
=-10μA IE=0 -60 V
=-10mA IB=0 -40 V
=-10μA IC=0 -5 μV
VCB=-50V IE=0 -0.02 μA
VCE=-30V
V
BE(OFF)
=-0.5V
VCE=-10V IC=-150mA
V
=-10V IC=-0.1mA
CE
V
=-10V IC=-1mA
CE
V
=-10V IC=-10mA
CE
V
=-10V IC=-500mA
CE
IC=-150mA IB=-15mA
I
=-500mA IB=-50mA
C
IC=-150mA IB=-15mA
I
=-500mA IB=-50mA
C
-0.05 μA
100
35
50
75
30
300
-0.4
-1.6
-1.3
-2.6
V
V
VCB=10V,f=1.0MHz 8.0 pF
VEB=10V,f=1.0MHz 30 pF
VCE=-20V IC=-50mA
f=100MHz
200 MHz
Turn-on time t
on
45 ns
VCE=-30V, IC=-150mA,
Delay time t
Rise time t
Turn-off time t
Storage time t
Fall time t
d
r
off
s
f
I
=-15mA
B1
VCE=-6V, IC=-150mA
I
=-15mA
B1=IB2
10 ns
40 ns
100 ns
80 ns
30 ns
Document number: BL/SSSTC090 www.galaxycn.com
Rev.A 2
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