BL Galaxy Electrical Production specification
NPN General Purpose Amplifier MMBT2369A
FEATURES
z Epitaxial planar die construction.
z Ultra-small surface mount package.
Pb
Lead-free
APPLICATIONS
z Use as a medium power amplifier.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBT2369A 1JA SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value
V
V
V
I
P
R
Tj,T
CBO
CEO
EBO
C
C
θJA
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal resistance,junction to ambient
Junction and Storage Temperature
40 V
15 V
4.5 V
200 mA
300 mW
417 ℃/W
-55to+150 ℃
Unit
Document number: BL/SSSTC115 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN General Purpose Amplifier MMBT2369A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage V
Collector cut-off current I
DC current gain h
Collector-emitter saturation
voltage
Base-emitter saturation voltage V
Output capacitance C
(BR)CBO IC
V
(BR)CEO IC
(BR)EBO IE
CBO
FE
V
CE(sat)
BE(sat)
obo
=10μA IE=0 40 V
=10mA IB=0 15 V
=10μA IC=0 4.5 V
VCB=20V IE=0 0.4
μA
VCE=1.0V IC=10mA 120
VCE=0.35V IC=10mA 40
VCE=0.4V IC=30mA 30
VCE=1.0V IC=100mA 20
IC=10mA IB=1.0mA
I
=30mA IB=3.0mA
C
I
=100mA IB=10mA
C
IC=10mA IB=1.0mA
I
=30mA IB=3.0mA
C
I
=100mA IB=10mA
C
0.2
V
0.25
0.5
0.7 0.85
V
1.15
1.6
VCB=5V,IE=0.f=1.0MHz 4.0 pF
Storage time t
Turn-on time t
Turn-off time t
S
on
off
IB1=IB2=IC=10mA 5.0 13 ns
VCC=3V,IC=10mA,
I
=3mA
B1
VCC=3V,IC=10mA,
I
=3mA,IB2=1.5mA
B1
8.0 12 ns
10 18 ns
Document number: BL/SSSTC115 www.galaxycn.com
Rev.A 2
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