BL Galaxy Electrical Production specification
NPN SWITCHING TRANSISTOR MMBT2222AT
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
(MMBT2907AT).
Pb
Lead-free
z Collector Current Capability I
z Ultra-small surface mount package.
=600mA.
c
APPLICATIONS
z General switching and amplification SOT-523
ORDERING INFORMATION
Type No. Marking Package Code
MMBT2222AT 1P SOT-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER MMBT3904T UNIT
V
V
CBO
CEO
collector-base voltage 75 V
collector-emitter voltage 40 V
V
EBO
I
C
P
d
R
θJA
T
stg
T
j
Document number: BL/SSSTH020 www.galaxycn.com
Rev.A 1
emitter-base voltage 6 V
collector current (DC) 600 mA
Power dissipation 150 mW
Thermal resistance, junction to Ambient 833 °C/W
storage temperature range -55 to +150 °C
junction temperature 150 °C
BL Galaxy Electrical Production specification
NPN SWITCHING TRANSISTOR MMBT2222AT
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)BEO
I
CEX
I
BL
h
FE
V
CE（sat）
V
BE（sat）
Collector-base breakown voltage IC=10μA,IE=0 75
Collector- emitter breakown
voltage
I
=10mA,IB=0 40
C
Emitter-base breakown voltage IE=10μA,IC=0 6
collector cut-off current VCE=60V,V
Base cut-off current VCE=60V, V
=10V,IC=0.1mA
V
CE
V
=10V,IC=1mA
CE
DC current gain
collector-emitter saturation
voltage
V
=10V,IC=10mA
CE
V
=10V,IC=150mA
CE
V
=10V,IC=500mA
CE
IC=150mA; IB=15mA 0.3 V
=500mA; IB=50mA 1 V
I
C
=3.0V 50 nA
EB(OFF)
=3.0V 50 nA
EB(OFF)
35
50
75
100
40
IC=150mA; IB=15mA 1.2 V
base-emitter saturation voltage
=500mA; IB=50mA 2.0 V
I
C
C
obo
C
ibo
f
T
Output capacitance IE=0,VCB=10V,f=1MHz 8 pF
Input capacitance IC=0,VBE=0.5V,f=1MHz 30 pF
transition frequency IC=20mA,VCE =20V,f=100MHz 300 MHz
NF noise figure
t
d
t
r
t
s
t
f
delay time - 10 ns
rise time
storage time - 225 ns
fall time
TYPICAL CHARACTERISTICS
I
=100μA,VCE =10V,
C
R
=1kΩ;f =1.0MHz
S
=150mA,IB1=15mA,V
I
C
V
=30V
CC
=30V,IC=150mA,IB1=IB2=15mA
V
CC
BE(off)
=-0.5V
@ Ta=25℃ unless otherwise specified
4 dB
- 25 ns
- 60 ns
Document number: BL/SSSTH020 www.galaxycn.com
Rev.A 2
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