BL Galaxy Electrical Production specification
NPN General Purpose Amplifier MMBT2222
FEATURES
z Epitaxial planar die construction.
z Ultra-small surface mount package.
Pb
Lead-free
APPLICATIONS
z Use as a medium power amplifier.
z Switching requiring collector currents up to 500mA. SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBT2222 M1B SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value
Unit
V
V
V
I
P
R
Tj,T
CBO
CEO
EBO
C
C
θJA
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal resistance Junction to ambient
Junction and Storage Temperature
60 V
30 V
5 V
600 mA
300 mW
417 ℃/W
-55 to+150 ℃
Document number: BL/SSSTC091 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN General Purpose Amplifier MMBT2222
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
(BR)CBO IC
(BR)CEO IC
(BR)EBO IE
CBO
EBO
FE
CE(sat)
BE(sat)
T
=10μA IE=0 60 V
=10mA IB=0 30 V
=10μA IC=0 5 V
VCB=50V IE=0 0.01 μA
VEB=3V IC=0
0.01 μA
VCE=10V IC=150mA 100 300
VCE=10V IC=0.1mA 35
VCE=10V IC=1.0mA 50
VCE=10V IC=10mA 75
VCE=10V IC=500mA 30
VCE=1V IC=150mA 50
IC=500mA IB=50mA
I
=150mA IB=15mA
C
IC=500mA IB=50mA
I
=150mA IB=15mA
C
VCE=20V IC=20mA
f=100MHz
250 MHz
1.6
0.4
2.6
1.3
V
V
Output capacitance C
Input capacitance C
Delay time t
Rise time t
Storage time t
Fall time t
obo
ibo
d
r
s
f
VCB=10V,IE=0,f=1MHz 8.0 pF
VEB=0.5V,IC=0, f=1MHz 30 pF
Vcc=30V, V
I
=150mA , IB1= 15mA
C
BE(off)
=0.5V
VCC=30V, IC=150mA
I
=15mA
B1=IB2
10 ns
25 ns
225 ns
60 ns
Document number: BL/SSSTC091 www.galaxycn.com
Rev.A 2
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